2SA2223 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor 2SA2223
DESCRIPTION
- Highfrequencymulti emittertransistor
- Smallpackage(TO-3P)
- Highpower handling capacity ,160W
- ComplementtoType 2SC6145
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation.
APPLICATIONS
- Signaltransistors foraudioamplifiers
- Audiomarket ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -230 V VCEO Collector-EmitterVoltage -230 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -15 A IB BaseCurrent-Continuous -4.0 A PC CollectorPowerDissipation @TC=25℃ 160 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor 2SA2223 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-25mA;IB=0 -230 V VCE(sat) Collector-EmitterSaturationVoltage IC=-5A;IB=-0.5A -0.5 V ICBO CollectorCutoffCurrent VCB=-230V;IE=0 -10 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -10 μA hFE DCCurrentGain IC=-5A;VCE=-4V 40 140 COB OutputCapacitance IE=0;VCB=-10V;f=1.0MHz 500 pF fT Current-Gain—BandwidthProduct IC=-2A;VCE=-12V 35 MHz hFE Classifications R O Y 40-80 50-100 70-140