2SA2222SG ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor 2SA2222SG
DESCRIPTION
- Large currentcapacitance
- High-speedswitching
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -50 V VCEO Collector-EmitterVoltage -50 V VEBO Emitter-BaseVoltage -6 V IC CollectorCurrent-Continuous -10 A ICM CollectorCurrent-Peak -13 A PC CollectorPowerDissipation @TC=25℃ 25 WCollectorPowerDissipation @Ta=25℃ 2 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor 2SA2222SG ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=-6A;IB=-300mA -0.5 V VBE(sat) Base-EmitterSaturationVoltage IC=-6A;IB=-300mA -1.2 V V(BR)CEO Collector-EmitterBreakdownVoltage IC=-1mA;IB=0 -50 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=-100uA;IC=0 -6 V ICBO CollectorCutoffCurrent VCB=-40V;IE=0 -10 μA IEBO EmitterCutoffCurrent VEB=-4V;IC=0 -10 μA hFE DCCurrentGain IC=-0.27A;VCE=-2V 150 450 COB OutputCapacitance IE=0;VCB=-10V;f=1.0MHz 115 pF fT Current-Gain—BandwidthProduct IC=-1A;VCE=-10V 230 MHz