2SA2221 SANYO

Document overview

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Technical content

Features

  • Large current capacitance.
  • Wide ASO and high durability against breakdown.
  • Adoption of MBIT process. Specifi cations ( ): 2SA2221 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)250 V Collector-to-Emitter Voltage V CEO (- -)230 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)15 A Collector Current (Pulse) I CP (- -)30 A Collector Dissipation P C 3.5 W Tc=25°C 170 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C 90308DA TI IM TC-00001593 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications www.semiconductor-sanyo.com/network

No. A1288-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)250V, IE=0A (- -)0.1 mA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)0.1 mA DC Current Gain hFE1V CE=(- -)5V, IC=(- -)1A 60 160 hFE2V CE=(- -)5V, IC=(- -)7.5A 35 Gain-Bandwidth Product f T VCE=(- -)5V, IC=(- -)1A (10)15 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (400)200 pF Base-to-Emitter Voltage V BE VCE=(- -)5V, IC=(- -)7.5A (- -)1.5 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)5mA, IE=0A (- -)250 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)50mA, RBE=∞ (- -)230 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)5mA, IC=0A (- -)6 V Turn-On Time t on See specifi ed Test Circuit. (0.45)0.56 μs Storage Time t stg See specifi ed Test Circuit. (1.75)3.3 μs Fall Time t f See specifi ed Test Circuit. (0.25)0.4 μs Package Dimensions Switching Time Test Circuit unit : mm (typ) 7502-001 12 3 1.0 2.0 1.0 1.0 6.0 2.0 1.02.0 3.4 0.6 26.020.7 1.2 20.0 5.0 3.32.8 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL 0123456789 1 0 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE IT02058 2SA2221 IB=0mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE IT02059 2SC6141 IB=0mA --40mA --20mA --500mA --400mA --300mA --200mA --100mA 40mA 20mA 500mA 400mA 300mA 200mA 100mA For PNP , the polarity is reversed. VR RB VCC=50VVBE= --5V 10IB1= --10IB2=IC=7.5A + + 50Ω INPUT OUTPUT RL= 6.67Ω 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2

No. A1288-3/4 100 210 23 3 5723 5 71.0 IT13958 0 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 2.5 3.5 3.0 4.0 IT13957 10ms 100ms 1ms DC operation 2SA2221 / 2SC6141 2SA2221 / 2SC6141 IC=15A ICP=30A 0.01 0.1 1.0 PC=170W Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- W Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Forward Bias A S O Tc=25°C Single Pulse For PNP, the minus sign(--) is omitted --0.01 --0.1 --1.0 Collector Current, IC -- A VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- V IT02064 2SA2221 IC / IB=10 0.01 0.1 1.0 10 21.0 23 5 70.1 23 5 70.01 23 5 7 Collector Current, IC -- A VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- V IT02065 2SC6141 IC / IB=10 No heat sink --40 25°C Ta=120 25°C --40 hFE -- IC Collector Current, IC -- A DC Current Gain, hFE IT02062 100 hFE -- IC Collector Current, IC -- A DC Current Gain, hFE IT02063 100 10 21.0 23 5 723 5 723 5 7 0.10.01 2SA2221 VCE= --5V 2SC6141 VCE=5VTa=120°C --40°C 25°C Ta=120°C --40°C 25°C Ta=120 Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VBE IT02060 Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VBE IT02061 2SA2221 VCE= --5V 2SC6141 VCE=5V Ta=120 --40 Ta=120 --40 --6 --8 --2 --4 --10 --12 --14 --16

No. A1288-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of September, 2008. Specifi cations and information herein are subject to change without notice. Case Temperature, Tc -- °C PC -- Tc Collector Dissipation, PC -- W IT13959 0 20 40 60 80 100 120 140 16 0 200 170 100 150 2SA2221 / 2SC6141