2SA2207 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • Adoption of MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO --50 V Collector-to-Emitter Voltage V CEO --50 V Emitter-to-Base Voltage V EBO -- 6 V Collector Current I C --13 A Collector Current (Pulse) I CP --15 A Base Current I B -- 2 A Collector Dissipation P C Tc=25°C2 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =- -40V, IE=0A - -10 µA Emitter Cutoff Current I EBO VEB =--4V, IC =0A - -10 µA DC Current Gain hFE 1V CE =- -2V, IC =- -270mA 200 500 hFE 2V CE =- -2V, IC =- -8.1A 50 Gain-Bandwidth Product f T VCE =- -5V, IC =- -700mA 110 MHz Output Capacitance Cob V CB =- -10V, f=1MHz 100 pF Continued on next page. SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1306EA TI IM TC-00000352 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. 2SA2207 PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications

No. A0233-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE (sat) I C =- -6A, IB=- -300mA - -250 - -500 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =- -6A, IB=- -300mA - -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =- -100µA, IE=0A - -50 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =- -1mA, RBE =∞ --50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=- -100µA, IC =0A - -6 V Turn-ON Time t on See specified Test Circuit. 80 ns Storage Time t stg See specified Test Circuit. 265 ns Fall Time t f See specified Test Circuit. 43 ns Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-003 7003-003 Switching Time Test Circuit IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IT10080 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 IB =0mA --600mA --100m A --20m A --200 mA --500mA --400mA --40m A --60m A --80m A --120m A --300mA --140m A --180m A IT10081 --160m A --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 IB =0mA --100mA --40m A --5m A --90mA --10m A --20m A --30m A--50m A --60m A --70m A --80mA VR R L VCC = - -25VVBE =5V ++50Ω INPUT OUTPUT R B 100µF 470µF PW=20 µs IB1 IB2D.C.≤1% 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA

No. A0233-3/4 --4 --2 --6 --8 --10 --12 V CE =--2V --1.4--1.2 --14 Ta=75 --25 Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Cob -- VCB VBE (sat) -- IC Collector Current, IC -- A VCE (sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Base-to-Emitter Saturation V oltage, VBE (sat) -- V hFE -- IC Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz fT -- IC hFE -- IC Collector Current, IC -- A DC Current Gain, hFE VCE (sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V IT10085 IT10086 --1.0 IT10089 --0.01 --0.1 --1.0 Ta=75 25°C --25°C IC / IB =20 IC / IB =20 Ta= --25°C 25°C 75°C IT10082 IT10084 100 1000 Ta=75°C 25°C --25°C V CE = --2V 100 V CE = --10V IT10083 100 1000 --107533 2 IT10087 --0.01 --0.1 --1.0 Ta=75 25°C --25°C IC / IB =50 --107533 2 --1035 7 --107532 3 IT10118 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A 100 f=1MHz 100 1000 --1V --500mV --200mV --700mV 35 7 VCE = -- Ta=25°C

No. A0233-4/4 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. IT11945IT11944 IT11946 1.2 0.2 200 0.4 0.6 0.8 1.0 40 60 80 100 120 140 160 160200 40 60 80 100 120 140 --0.01 --0.1 --1.0 --10 --0.1 23 5 7 23 5 7--1.0 23 5 7 --10 ICP = --15A DC operation1ms 10m s PT=500 µs IC = --13A 100ms PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V PC -- Tc Collector Dissipation, PC -- W Case Temperature, Tc -- °C Tc=25°C Single pulse Forward Bias A S O