2SA2205 SANYO

Document overview

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Technical content

Features

  • Adoption of FBET, MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO - -100 V Collector-to-Emitter Voltage V CES - -100 V Collector-to-Emitter Voltage V CEO - -100 V Emitter-to-Base Voltage V EBO -- 7 V Collector Current I C -- 2 A Collector Current (Pulse) I CP -- 3 A Base Current I B - -400 mA Collector Dissipation P C 0.8 W Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =- -80V, IE=0A - -1 µA Emitter Cutoff Current I EBO VEB =- -4V, IC =0A - -1 µA DC Current Gain h FE VCE =- -5V, IC =- -100mA 200 400 Gain-Bandwidth Product f T VCE =- -10V, IC =- -500mA 300 MHz Output Capacitance Cob V CB =- -10V, f=1MHz 20 pF Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806EA SY IM TC-00000309 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. SANYO Semiconductors DATA SHEET 2SA2205 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

No. A0544-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE (sat) I C =- -1A, IB=- -100mA - -120 - -240 mV Base-to-Emitterr Saturation Voltage V BE (sat) I C =- -1A, IB=- -100mA - -0.85 --1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =- -10µA, IE=0A - -100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC =- -100µA, RBE =0Ω - -100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =- -1mA, RBE =∞ - -100 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=- -10µA, IC =0A - -7 V Turn-On Time t on See specified Test Circuit. 40 ns Storage Time t stg See specified Test Circuit. 600 ns Fall Time t f See specified Test Circuit. 30 ns Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-003 7003-003 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA VR VCC = --50VVBE =5V + + 50Ω INPUT OUTPUT R L 220µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 IC = --10IB1 =10IB2 = --0.5A 1kΩ

No. A0544-3/4 Base-to-Emitter V oltage, VBE -- V IC -- VBE Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Cob -- VCB VBE (sat) -- IC fT -- IC VCE (sat) -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V hFE -- IC Collector Current, IC -- A DC Current Gain, hFE A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V IT11664IT11663 IT11668 IT11666 IT11667 IT11669 IT11670 IT11665 --2.0 --1.4 --1.8 --0.6 --1.0 --0.2 --1.6 --0.8 --1.2 --0.4 --40mA--200mA IB =0mA --100mA --80mA --60mA --20mA --5mA --120mA--180mA --160mA --140mA --2.0 --1.6 --0.4 --0.8 --1.2 --0.2 --0.6 --1.0 --1.4 --1.8 Ta=75°C 25°C --25°C 100 1000 V CE = --5V 100 1000 V CE = --10V 100 1.0 f=1MHz Ta=75 --25°C IC / IB =10 25°C --0.01 --0.1 75°C Ta= --25°C IC / IB =10 25°C --1.0 --0.1 --0.01 DC operation IC = --2A ICP = --3A 500 µs 100ms --1.0 <10µs 100 µs 10ms 1ms Tc=25°C Single pulse Ta=75 --25 --2.0 --1.6 --0.4 --0.8 --1.2 --0.2 --0.6 --1.0 --1.4 --1.8 V CE = --5V

No. A0544-4/4PS IT11671 <10µs IT11652 0.9 0.2 200 0.4 0.6 0.8 0.1 0.3 0.5 0.7 40 60 80 100 120 140 160 IT11653 17.5 2.5 160200 40 60 80 5.0 7.5 12.5 10.0 15.0 100 120 140 A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Ta=25°C Single pulse PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C PC -- Tc Collector Dissipation, PC -- W Case Temperature, Tc -- °C --0.1 23 5 7 --1.0 22 3 5 7 --100 235 7 --10 --0.01 --0.001 DC operation IC = --2A ICP = --3A 500 µs 100ms --0.1 100 µs 10ms 1ms --1.0 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice.