2SA2181 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO - -50 V Collector-to-Emitter Voltage V CEO - -50 V Emitter-to-Base Voltage V EBO -- 6 V Collector Current I C - -15 A Collector Current (Pulse) I CP - -20 A Base Current I B -- 3 A Collector Dissipation P C Tc=25°C2 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =- -40V, IE=0A - -10 µA Emitter Cutoff Current I EBO VEB =- -4V, IC =0A - -10 µA DC Current Gain hFE 1V CE =- -2V, IC =- -330mA 200 500 hFE 2V CE =- -2V, IC =- -10A 50 Gain-Bandwidth Product f T VCE =- -10V, IC =- -700mA 120 MHz Output Capacitance Cob V CB =- -10V, f=1MHz 140 pF Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2505FA MS IM TB-00001826 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 2SA2181 PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching

Applications

No.8527-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE (sat) I C =- -7.5A, IB=- -375mA - -250 - -500 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =- -7.5A, IB=- -375mA - -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =- -100µA, IE=0A - -50 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =- -1mA, RBE =∞ - -50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=- -100µA, IC =0A - -6 V Turn-ON Time t on See specified Test Circuit. 80 ns Storage Time t stg See specified Test Circuit. 300 ns Fall Time t f See specified Test Circuit. 45 ns Package Dimensions Switching Time Test Circuit unit : mm 7508-002 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector-to-Emitter V oltage, V CE -- V Collector Current, IC -- A IC -- VCE Collector Current, IC -- A IT09987 --1 --7 --6 --5 --4 --3 --2 --8 --9 --10 --11 --12 --13 --14 --15 IB =0mA --50mA --20mA --100mA --200mA--250mA --150mA--300mA --350mA --400mA --450mA --500mA --600mA --700mA --800mA IT09988 --1 --2 --3 --4 --5 --6 --7 --8 IB =0mA --40mA --20mA --10mA --60mA --80mA--100mA --120mA --140mA --160mA --180mA --200mA --250mA --300mA VR R L VCC = - -25VVBE =5V IC =20IB1 = - -20IB2 = - -7A + +50Ω INPUT OUTPUT R B 100µF 470 µF PW=20 µs IB1 IB2D.C.≤1% 10.0 3.2 4.5 2.8 16.0 18.1 5.6 14.0 3.5 7.22.4 1.6 1.2 0.70.75 2.55 2.55 123 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML

No.8527-3/4 IT09993 Cob -- VCB VBE (sat) -- IC IT09994 --1.0 IT09996 VCE (sat) -- IC --0.1 --1.0 --0.01 Ta=75 25°C --25 Ta= --25°C 25°C 75°C IC / IB =20 IC / IB =20 Ta= --25°C 25°C 75°C IT09992 fT -- IC IT09995 VCE (sat) -- IC --0.1 --1.0 --0.01 Ta=75 25°C --25 IC / IB =50 hFE -- IC IT09900 --16 --12 --14 --10 --4 --2 --8 --6 IC -- VBE IT09989 V CE = --2V --25 Ta=75 hFE -- IC IT09991 Ta= --25°C 25°C 75°C Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V --0.1 --1.023 5 7 2 --1035 7 2 35 7 100 1000 100 1000 V CE = --10V 100 1000 --0.01 325 --0.172 3 5 --1.0 --1072 2 35 3 7 Ta=75°C 25°C --25°C V CE = --2V 100 1000 --0.01 325 --0.173 25 7 3 25 7--1.0 --10 23 5 Ta=25°C VCE = --2V --500mV --200mV --1V f=1MHz

No.8527-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PS Forward Bias A S O --0.1 23 5 7 --1.0 23 5 7 23 5 7--10 IT09997 --0.1 --1.0 --0.01 PC -- Tc IT09998 DC operation IC = --15A ICP = --20A 500 µs 100ms 10ms 1ms 160200 40 60 80 100 120 140 --10 PC -- Ta IT09985 2.5 0.5 200 1.0 1.5 2.0 40 60 80 100 120 140 160 Collector Dissipation, PC -- W Case Temperature, Tc -- °C Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C No heat sink Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Tc=25°C Single pulse