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Publication date : December 2004 SJC00330AED 1 2SA2164 Silicon PNP epitaxial planar type For high-frequency amplification Features High transfer ratio fT SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –30 V Collector-emitter voltage (Base open) VCEO –20 V Emitter-base voltage (Collector open) VEBO –5 V Collector current IC –30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Base-emitter voltage VBE VCE = –10 V , IC = –1 mA – 0.7 V Collector-base cutoff current (Emitter open) ICBO VCB = –10 V , IE = 0 – 0.1 µA Collector-emitter cut-off current (Base open) ICEO VCE = –20 V , IB = 0 –100 µA Emitter-base cut-off current (Collector open) IEBO VEB = –5 V , IC = 0 –10 µA Forward current transfer ratio hFE VCB = –10 V , IE = 1 mA 70 220 Collector-emitter saturation voltage VCE(sat) IC = –10 mA, IB = –1 mA – 0.1 V Transition frequency fT VCB = –10 V , IE = 1 mA, f = 200 MHz 150 300 MHz Noise figure NF VCB = –10 V , IE = 1 mA, f = 5 MHz 2.8 dB Reverse transfer impedance Zrb VCB = –10 V , IE = 1 mA, f = 2 MHz 22 Ω Common-emitter reverse transfer capacitance Cre VCB = –10 V , IE = 1 mA, f = 10.7 MHz 1.2 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Unit: mm 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package 1.20±0.050.52±0.03 0 to 0.01 0.15 max. 0.15 min. 0.80±0.050.15 min. 0.33 (0.40)(0.40) 1 2 0.80±0.05 1.20±0.05 +0.05 –0.02 0.10+0.05 –0.02 0.23+0.05 –0.02 Marking Symbol : E
2 SJC00330AED
PC Ta IC VCE IC VBE VCE(sat) IC hFE IC Cob VCB 0 20 40 60 80 100 120 140 100 120 2SA2164_ PC-Ta Collector power dissipation PC (mW) Ambient temperature Ta (°C) −10 −15 −20 −25 2SA2164_ IC-VCE Collector current IC (mA) Collector-emitter voltage VCE (V) −250 µA −200 µA −150 µA −100 µA −50 µA IB = −300 µATa = 25°C −10 −15 −30 −20 −25 2SA2164_ IC-VBE Collector current IC (mA) Base-emitter voltage VBE (V) VCE = −10 V Ta = 85°C 25°C −25°C − 0.1 −1 −10 −100 − 0.01 − 0.1 −10 2SA2164_ VCE(sat)-IC Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) IC / IB = 10 Ta = 85°C 25°C −25°C −0.1 −1 −10 −100 100 120 140 160 2SA2164_ hFE-IC Forward current transfer ratio hFE Collector current IC (mA) VCE = −10 V Ta = 85°C 25°C −25°C 0 15 20 2 55 10 30 0.1 2SA2164_ Cob-VCB Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) f = 1 MHz Ta = 25°C
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