2SA2140 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA2140
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min)
- Good Linearity of hFE
APPLICATIONS
- Designed for power amplification and for TV VM circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Peak -3 A PC Collector Power Dissipation @Ta=25℃ 2 W Collector Power Dissipation @TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA2140
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -0.5 V ICBO Collector Cutoff Current VCB= -180V ; IE= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -100 μ A hFE DC Current Gain IC= -0.1A ; VCE= -5V 60 240 COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz 30 pF fT Current-Gain—Bandwidth Product IC= -0.2A; VCE= -10V; f= 10MHz 100 MHz Switching Times ton Turn-on Time IC= -0.4A,VCC= 100V IB1= -IB2= -0.04A 0.1 μ s tstg Storage Time 1.0 μ s tf Fall Time 0.1 μ s hFE Classifications Q P 60-140 120-240