2SA2140 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA2140
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=-180V(Min)
- Good Linearity of hFE
APPLICATIONS
- Designed for power amplification and for TV VM circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic ICP PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @Ta=25"C Collector Power Dissipation @TC=25BC Junction Temperature Storage Temperature VALUE -180 -180 -1.5 150 -55-150 UNIT V V V A A W r ppf PIN i i 1 2 3 1.BASE 2. COLLECTOR 3. EMITTER TO-220F package .• • B t. •-* F O '"""' O L 4 -•• i : I ' ''•' I ' - - o - N - Q H K DIM A B C D F H J K L N q R S U , c - -a- » H * : * -R'- J -- ! O ,": O U i V__.' -.» A ', I _ • mm MIN 14.95 10.00 4,40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0.80 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA2140
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) ICBO IEBO hFE COB fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc=-10mA;lB=0 IC=-1A;IB=-0.1A VCB=-180V;IE=0 VEB= -6V; lc= 0 lc=-1A;VCE=-5V lE=0;VCB=-lOV;f=1MHz lc= -0.2A; VCE= -10V; f= 10MHz MIN -180 TYP. 100 MAX -0.5 -100 -100 240 UNIT V V wA uA PF MHz Switching Times ton Utg tf Turn-on Time Storage Time Fall Time
- hFE Classifications Q 60-140 P 120-240 lc= -0.4A,VCC= 100V IB1= -lB2= -0.04A 0.1 1.0 0.1 u s w s us