2SA2125

2SA2125_12 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 8

Technical content

Features

• Adoption of MBIT process • Large current capacity
• Low collector-to-emitter saturation voltage • High-speed switching
• Halogen free compliance Specifi cations ( ) : 2SA2125 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (-50)100 V Collector-to-Emitter Voltage VCES (-50)100 V VCEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)6 V Continued on next page. Package Dimensions unit : mm (typ) 7007B-004

91912 TKIM/N3004 TSIM TB-00000265

PNP / NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications http://www.sanyosemi.com/en/network/ Product & Package Information

• Package : PCP
• JEITA, JEDEC : SC-62, SOT-89, TO-243 Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking Electrical Connection TD 1 : Base 2 : Collector 3 : Emitter SANYO : PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 Top View Bottom View 2SA2125-TD-E 2SA2125-TD-H 2SC5964-TD-E 2SC5964-TD-H AY LOT No. HA LOT No. 2SC59642SA2125 2SC5964 2SA2125

No.7988-2/8 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I C (- -)3 A Collector Current (Pulse) I CP (- -)6 A Base Current I B (- -)600 mA Collector Dissipation P C When mounted on ceramic substrate (250mm ×0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)40V, IE=0A (- -)1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)1 μA DC Current Gain h FE VCE=(- -)2V, IC=(- -)100mA 200 560 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)500mA (390)380 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (24)13 pF Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)2A, IB=(- -)100mA (- -)0.94 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(- -)100μA, RBE=0Ω (- -50)100 V V(BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-ON Time t on See specifi ed Test Circuit. (30)35 ns Storage Time t stg (230)300 ns Fall Time t f (18)25 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SA2125-TD-E PCP 1,000pcs./reel Pb Free 2SA2125-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SC5964-TD-E PCP 1,000pcs./reel Pb Free 2SC5964-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. VR RB VCC=25VVBE= --5V + + 50Ω INPUT OUTPUT RL 100μF 470 μF PW=20μs D.C.≤1% IB1 IB2

No.7988-3/8 IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A --5.0 --4.5 --4.0 --3.0 --3.5 --2.0 --2.5 --1.0 --1.5 --0.5 5.0 4.5 4.0 3.0 3.5 2.0 2.5 1.0 1.5 0.5 IT07258 IT07259 --10mA --20mA --50mA --150mA --250mA --100mA IB=0mA --5mA 10mA 20mA 40mA 80mA 60mA 100mA IB=0mA 5mA 2SA2125 --200mA 2SC5964 hFE -- IC hFE -- IC fT -- IC fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- ACollector Current, IC -- A DC Current Gain, hFE IT07262 IT07263 100 1000 IT07264 2SA2125 VCE= --10V 100 1000 0.01 25 732 5 7 32 5 30.1 1.0 IT07265 2SC5964 VCE=10V Ta=75°C 25°C --25°C 1000 100 2SA2125 VCE= --2V Ta=75°C 25°C --25°C 1000 100 0.01 325 0.173 25 7 3 251.0 2SC5964 VCE=2V 2SC5964 VCE=2V IT07261 Ta=75 --25 Ta=75 --25 2SA2125 VCE= --2V --3.0 --2.5 --2.0 --1.0 --0.5 --1.5 3.0 2.5 2.0 1.0 0.5 1.5 IT07260 IC -- VBEIC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A

No.7988-4/8 Cob -- VCB Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF 100 --0.1 3725 3 7 25 3 7 25--1.0 --10 --100 100 0.1 3725 3 7 25 3 7 251.0 10 100 IT07266 2SA2125 f=1MHz IT07267 2SC5964 f=1MHz --0.01 --0.123 5 7 23 5 7 23 5 --1.0 --1.0 --0.1 --0.01 Ta=75 Ta= --25 25°C --25°C 2SA2125 IC / IB=50 --1.0 --0.01 --0.1 --1.0 Ta= --25°C 25°C 75°C Ta= --25°C 25°C 75°C 23 5 7 23 5 23 5 7 1.0 0.01 0.1 1.0 23 5 7 23 5 23 5 7 2SA2125 IC / IB=20 2SC5964 IC / IB=20 VCE(sat) -- IC VBE(sat) -- IC VCE(sat) -- IC VBE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector Current, IC -- A 0.1 0.01 IT07270 IT07271 Ta=75 25°C --25 IT07272 2SC5964 IC / IB=50 IT07273 VCE(sat) -- IC VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector Current, IC -- A --0.1 --0.01 --0.01 --0.123 5 7 23 5 7 23 5 --1.0 Ta=75 --25°C IT07268 2SA2125 IC / IB=20 25°C IT07269 0.1 0.01 0.01 0.1 23 5 7 23 5 7 23 5 1.0 Ta=75 --25 2SC5964 IC / IB=20 25°C

No.7988-5/8 1.0 0.1 0.01 23 5 70.1 1.0 23 5 7 10 23 5 7 DC operation 100 μs 500 μs 10ms ICP=6A IC=3A <10μs 1ms 100ms A S O PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °CCollector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IT07274 1.4 0.6 0.8 1.0 1.2 1.3 0.4 0.2 2006 0 40 80 100 140 120 160 IT07275 2SA2125 / 2SC5964 2SA2125 / 2SC5964 Tc=25°C Single Pulse (For PNP, minus sign is omitted.) Mounted on a ceramic board (250mm 2✕0.8mm) PC -- Tc Case Temperature, Tc -- °C Collector Dissipation, PC -- W 4.0 3.0 2.5 3.5 2.0 1.5 1.0 0.5 2006 0 40 80 100 140 120 160 IT07276 2SA2125 / 2SC5964

No.7988-6/8 Embossed Taping Specifi cation 2SA2125-TD-E, 2SA2125-TD-H, 2SC5964-TD-E, 2SC5964-TD-H

No.7988-7/8 Outline Drawing Land Pattern Example 2SA2125-TD-E, 2SA2125-TD-H, 2SC5964-TD-E, 2SC5964-TD-H Mass (g) Unit 0.058 * For reference mm Unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45° 45°

PS No.7988-8/8 This catalog provides information as of September, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.