2SA2124_09 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • Adoption of MBIT processes.
  • Low collector-to-emitter saturation voltage.
  • High current capacity.
  • High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO - -30 V Collector-to-Emitter Voltage VCEO - -30 V Emitter-to-Base Voltage VEBO -- 6 V Collector Current IC -- 2 A Collector Current (Pulse) ICP -- 5 A Base Current IB - -400 mA Collector Dissipation PC Mounted on a ceramic board (450mm2✕0.8m) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Marking : AX www.semiconductor-sanyo.com/network

80509 TK IM TC-00002048 / D2004EA TS IM TB-00000072

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA2124 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

No.7920-2/4 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=- -30V, IE=0A - -0.1 μA Emitter Cutoff Current I EBO VEB=- -4V, IC=0A - -0.1 μA DC Current Gain hFE(1) V CE=- -2V, IC=- -100mA 200 560 hFE(2) V CE=- -2V, IC=- -1.5A 65 Gain-Bandwidth Product f T VCE=- -10V, IC=- -300mA 440 MHz Collector-to-Emitter Saturation Voltage V CE(sat) I C=- -1.5A, IB=- -75mA - -0.2 - -0.4 V Base-to-Emitterr Saturation Voltage V BE(sat) I C=- -1.5V, IB=- -75mA - -0.95 - -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=- -10μA, IE=0A - -30 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=- -1mA, RBE=∞ - -30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=- -10μA, IC=0A - -6 V Output Capacitance Cob V CB=- -10V, f=1MHz 17 pF Turn-On Time t on See specified Test Circuit. 45 ns Storage Time t stg See specified Test Circuit. 200 ns Fall Time t f See specified Test Circuit. 23 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007B-004 VR RB VCC= --12VVBE=5V + +50Ω INPUT OUTPUT RL 220μF 470 μF PW=20μs IB1 D.C.≤1% IC IB2 IC= --20IB1=20IB2= --0.5A

No.7920-3/4 Cob -- VCB --0.1 3725 3 7 25 3 2--1.0 --10 5 IT07252 f=1MHz --0.1 --0.01 --0.01 --0.123 5 7 23 5 7 23 5 --1.0 VCE(sat) -- IC Ta=75 --25 IT07253 IC / IB=20 25°C IT07255 A S OVBE(sat) -- IC3 --1.0 --0.01 --0.1 --1.0 Ta= --25°C 25°C 75°C 23 5 7 23 5 23 5 7 IC / IB=20 IT07254 Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A --1.0 --10 --0.1 --0.01 23 5 7--0.1 --1.0 23 5 7 --10 23 5 100ms DC operation 10ms ICP= --5A IC= --2A 1ms Dissipation Limited S / B Limited 100 μs 500 μs <10μs Tc=25°C Single Pulse Ta=75°C 25°C --25°C 100 hFE -- IC VCE= --2V IT07250 fT -- IC 100 1000 IT07251 VCE= --10V Collector Current, IC -- A DC Current Gain, hFE Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A --2.0 --1.8 --1.6 --1.2 --1.4 --0.8 --1.0 --0.4 --0.6 --0.2 IC -- VCE IT07248 --10mA --15mA--20mA--25mA--40mA IB=0mA --5mA --2mA Ta=75 --25 VCE= --2V --2.0 --1.0 --0.5 --1.5 IC -- VBE IT07249 --35mA--30mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A

No.7920-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS 1.4 0.6 0.8 1.0 1.2 1.3 0.4 0.2 2006 0 40 80 100 140 120 160 PC -- Ta IT07256 Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C Mounted on a ceramic board (450mm 2✕0.8mm) PC -- Tc Collector Dissipation, PC -- W Case Temperature, Tc -- °C 4.0 0.5 160200 IT08355 40 60 80 1.0 1.5 2.0 2.5 3.0 3.5 100 120 140 This catalog provides information as of August, 2009. Specifications and information herein are subject to change without notice.