2SA2121 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA2121
DESCRIPTION
- High Current Capability
- High Power Dissipation
- High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min)
- Complement to Type 2SC5949
APPLICATIONS
- Power amplifier applications
- Recommended for audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous -1.5 A PC Collector Power Dissipation @ TC=25℃ 220 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA2121
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V VBE(on) Base-Emitter On Voltage IC= -8A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 -5 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μ A hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -8A ; VCE= -5V 35 COB Output Capacitance IE=0 ; VCB= -10V;f= 1.0MHz 470 pF fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 25 MHz hFE-1 Classifications R O 55-110 80-160