2SA2121 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
I Cx S.IIS.L , Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA2121
DESCRIPTION
- High Current Capability
- High Power Dissipation
- High Collector-Emitter Breakdown Voltage- : V(BR)CEo= -200V(Min)
- Complement to Type 2SC5949
APPLICATIONS
- Power amplifier applications
- Recommended for audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Tc=25r Junction Temperature Storage Temperature Range VALUE -200 -200 -15 -1.5 220 150 -55-150 UNIT V V V A A W 1 2 3 PIN 1.BASE 2.COLLECTOR 3. EMITTER TO-3PL package H ! DIM A B C D E F G H J K N P Q R LI W mm MIN 25.50 19.30 4.50 0.90 2.80 2.40 10,80 3.10 0.50 20.00 3.90 2.40 3.10 1.90 3.90 2 JO MAX Ksa 20 JO 5,50 1.10 3.20 2.60 11.00 3.30 0.70 21.00 4.10 2.60 3.50 2.10 4.10 3.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA2121
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(on) ICBO IEBO hpE-1 hFE-2 COB fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -50mA ; IB= 0 IC=-10A;IB=-1A lc= -8A ; VCE= -5V VCB= -200V ; IE= 0 VEB= -5V; lc= 0 lc=-1A; VCE=-5V lc= -8A ; VCE= -5V IE=0 ; VCB= -1 OV;f= 1.0MHz lc=-1A;VCE=-5V MIN -200 TYP. 470 MAX -3.0 -1.5 160 UNIT V V V UA uA PF MHz hpE-1 Classifications R 55-110 80-160