2SA2121 TOSHIBA

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications z Complementary to 2SC5949 z Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −200 V Collector-emitter voltage VCEO −200 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.5 A Collector power dissipation PC 220 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.)

Electrical Characteristics (Tc = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = −200 V, IE = 0 ― ― −5.0 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −5.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = −50 mA, IB = 0 −200 ― ― V hFE (1) (Note 1) VCE = −5 V, IC = −1 A 55 ― 160 DC current gain hFE (2) VCE = −5 V, IC = −8 A 35 60 ― Collector-emitter saturation voltage V CE (sat) IC = −10 A, IB = −1 A ― −1.5 −3.0 V Base-emitter voltage VBE VCE = −5 V, IC = −8 A ― −1.0 −1.5 V Transition frequency fT VCE = −5 V, IC = −1 A ― 25 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 470 ― pF Note 1: h FE(1) classification R: 55 to 110, O: 80 to 160 Marking 2SA2121 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) Characteristics indicator

−120 −12 −16 −20 −0.1 1000 −0.03 −30−10 −10 −1 −0.1 −0.01 100 IC – VCE IC– VBE hFE – IC VCE (sat) – IC fT– IC Common emitter Tc = 25°C VCE = −5 V Tc = 100°C −25 Common emitter VCE = −5 V IB = −20 mA Common emitter Tc = 25°C −500 −400 −200 −300 −100 −50 −0.5 −12 −16 0 −1.0 −2.5 100 −1000 −0.1 −10 −10 −100 −0.1 −1 Safe Operating Area −100 Transition frequency f T (MHz) Collector-emitter voltage V CE ( V ) Collector current I C (A) Base-emitter voltage V BE (V) Collector current I C (A) Collector current I C (A) DC current gain h FE Collector current I C (A) Collector current I C (A) Collector-emitter saturation voltage VCE (sat) (V) Collector current I C (A) Collector-emitter voltage V CE ( V ) Tc = 100°C 25 −25 Common emitter VCE = −5 V −1.5 −2.0 300 500 Tc = 100°C −25 Common emitter IC / IB = 10 V −0.03 −0.05 −0.5 −0.1 −0.3 VCEO max *:Single non-repetitive pulse Tc = 25°C Curves must be de-rated linearly with increase in temperature. 1 ms * IC max (pulsed) * 10 ms * IC max (continuous) DC operation Tc = 25°C 100 ms *

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.