2SA2071

2SA2071 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn SMD Type SMD Type Transistors PNP Transistors 2SA2071 ■ Features

• High speed switching. (Tf : Typ. : 20ns at IC = -3A)
• Low saturation voltage, typically (Typ. : -2 00mV at IC = -2A, IB = -0.2A)
• Strong discharge power for inductive load and capacitance load. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -6 IC -3 IC P -6 Collector Power Dissipation PC 0.5 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V Collector Current A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Collecto- base breakdown voltage VCBO Ic= -100 µA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -1.0 Emitter cut-off current IEBO VEB= -4V , IC=0 -1.0 DC current gain hFE VCE= -2V, IC= -100mA 120 390 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-200mA -0.2 -0.5 V Collector output capacitance Cob VCB= -10V, IE=0mA, f=1MHz 50 PF Transition frequency fT VCE= -10V, IE= 10mA,f=10MHz 180 MHz V uA

www.kexin.com.cn SMD Type SMD Type Transistors Typical Characteristics −0.1 −1 −10 −100 COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.1 Safe Operating Area −0.001 −0.01 −0.1 COLLECTOR CURRENT : I C (A) −10 100ms 10ms 1ms 100us DC −0.01 −0.1 −1 −10 COLLECTOR CURRENT : I C (A) Fig.2 Switching Time 100 SWITCHING TIME : (ns) 1000 Ta=25°C V CC = −25V I C B =10/1 Tstg Tf Ton COLLECTOR CURRENT : I C (A) Fig.3 DC Current Gain vs. Collector Current (Ι) 100 DC CURRENT GAIN : h FE 1000 V CE = −2V Ta=25°C Ta= −40°C Ta=125°C COLLECTOR CURRENT : I C (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) 100 DC CURRENT GAIN : h FE 1000 Ta=25°C V CE = −5V V CE = −3V V CE = −2V COLLECTOR CURRENT : I C (A) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) −0.01 −0.1 COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) −10 Ta=25°C Ta= −40°C Ta=125°C I C B =10/1 I C B =10/1 Ta=25°C COLLECTOR CURRENT : I C (A) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) −0.01 −0.1 COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) −10 I C B =20/1 2SA2071

www.kexin.com.cn SMD Type SMD Type Transistors Typical Characteristics 2SA2071 COLLECTOR CURRENT : I C (A) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current −0.01 −0.1 BASE EMITTER SATURATION VOLTAGE : V BE (sat) (V) −10 I C B =10/1 Ta=125°C Ta=25°C Ta= −40°C 0 −0.5 −1 −1.5 BASE TO EMITTER VOLTAGE : V BE (V) Fig.8 Grounded Emitter Propagation Characteristics −0.01 −0.1 COLLECTOR CURRENT : I C (A) −10 V CE = −2V Ta= −40°C Ta=25°C Ta=125°C 0.001 0.01 0.1 1 10 EMITTER CURRENT : I E (A) Fig.9 Transition Frequency TRANSITION FREQUENCY : fT (MHz) 1000 Ta=25°C V CE = −10V 100 −0.1 −1 −10 −100 COLLECTOR TO BASE VOLTAGE : V CB (V) Fig.10 Collector Output Capacitance 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25°C f=1MHz