2SA2066 TOSHIBA

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Technical content

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications DC-DC Converter Applications

  • High DC current gain: hFE = 200 to 500 (IC = −0.2 A)
  • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)
  • High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO −20 V Collector-emitter voltage V CEO −10 V Emitter-base voltage V EBO −7 V DC I C −2.0 Collector current Pulse I CP −3.5 A Base current I B −200 mA t = 10 s 2.0 Collector power dissipation DC PC (Note 1) 1.0 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I CBO V CB = −20 V, IE = 0 ― ― −0.1 µA Emitter cut-off current I EBO V EB = −7 V, IC = 0 ― ― −0.1 µA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −10 ― ― V hFE (1) VCE = −2 V, IC = −0.2 A 200 ― 500 DC current gain hFE (2) VCE = −2 V, IC = −0.6 A 125 ― ― Collector-emitter saturation voltage V CE (sat) I C = −0.6 A, IB = −0.02 A ― ― −0.19 V Base-emitter saturation voltage V BE (sat) I C = −0.6 A, IB = −0.02 A ― ― −1.1 V Rise time t r ― 50 ― Storage time t stg ― 115 ― Switching time Fall time t f See Figure 1. VCC ≈ −6 V, RL = 10 Ω −IB1 = IB2 = −20 mA ― 25 ― ns Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.)

Figure 1 Switching Time Test Circuit & Timing Chart IB2 IB1 20 µs Output Input IB2 IB1 RL VCC Duty cycle < 1% 4 E Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

Collector current I C ( A ) Base-emitter saturation voltage VBE (sat) ( V ) Collector-emitter voltage V CE (V) IC – VCE Collector current I C ( A ) Collector current I C (A) hFE – IC DC current gain h FE Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) ( V ) Collector current I C (A) VBE (sat) – IC Base-emitter voltage V BE (V) IC – VBE 10000 1000 100 Common emitter VCE = −2 V Single nonrepetitive pulse Ta = 100°C −55 −10 −0.1 Common emitter IC/IB = 30 Single nonrepetitive pulse 25−55 Ta = 100°C Common emitter Ta = 25°C Single nonrepetitive pulse −0.4 −1.2−0.8 −1.6 −1.2 −0.8 −0.4 IB = −2 mA −10 −20 −40 −60 −80 −0.2 −1 −0.6 −0.4 −1.2 Ta = 100°C Common emitter VCE = −2 V Single nonrepetitive pulse −55 −0.8 −1.6 −0.001 −0.1 −0.01 Common emitter IC/IB = 30 Single nonrepetitive pulse −55 Ta = 100°C

Pulse width t w (s) rth – tw Transient thermal resistance rth (j-a) (°C/W) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C ( A ) 0.001 0.01 0.1 1 10 100 1000 1000 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 100 −0.01 −0.1 −1 −10 −100 −0.1 −10 IC max (pulsed) ♦ DC operation * (Ta = 25°C) VCEO max IC max (continuous) 10 s♦* 10 ms♦ 1 ms♦ 100 ms♦* ♦: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy , 1.6 mm thick, Cu area: 645 mm 2). These characteristic curves must be derated linearly with increase in temperature. 100 µs♦

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