2SA2062 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website： www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor 2SA2062
DESCRIPTION
- Large currentcapacitance
- WideASO and high durabilityagainstbreakdown
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- 140V/10V,AF70Woutput applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -160 V VCEO Collector-EmitterVoltage -140 V VEBO Emitter-BaseVoltage -6 V IC CollectorCurrent-Continuous -10 A ICM CollectorCurrent-Pulse -20 A PC CollectorPowerDissipation @Ta=25℃ 2.5 W CollectorPowerDissipation @TC=25℃ 110 TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
isc website： www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor 2SA2062 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-50mA;IB=0 -140 V VCE(sat) Collector-EmitterSaturationVoltage IC=-5A;IB=-500mA -2.0 V VBE(on) Base-EmitterOnVoltage IC=-5A;VCE=-5V -1.5 V ICBO CollectorCutoffCurrent VCB=-160V;IE=0 -0.1 mA IEBO EmitterCutoffCurrent VEB=-6V;IC=0 -0.1 mA hFE-1 DCCurrentGain IC=-1A;VCE=-5V 60 160 hFE-2 DCCurrentGain IC=-5A;VCE=-5V 35