2SA2058_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA2058 ■ Features

  • High DC current gain: hFE = 200 to 500 (IC = −0.2 A)
  • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)
  • High-speed switching: tf = 25 ns (typ.) 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -10 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -1.5 Collector Current - Pulse ICP -2.5 Base Current IB -150 mA Collector Power Dissipation 500 t=10s (Note.1) 750 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC mW Note.1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm )2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -20 Collector- emitter breakdown voltage VCEO Ic= -10 mA，IB= 0 -10 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -20V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -7V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-600mA, IB=-20mA -0.19 Base - emitter saturation voltage VBE(sat) IC=-600mA, IB=-20mA -1.1 VCE= -2V, IC= -200mA 200 500 VCE= -2V, IC= -600mA 125 Rise Time tr 50 Storage Time tstg 115 Fall Time tf 25 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 12 pF DC current gain hFE See Figure 1 circuit diagram. VCC = −6 V, RL = 10 Ω −IB1 = IB2 = −20 mA ns V V uA ■ Marking Marking WM

www.kexin.com.cn2 Transistors PNP Transistors 2SA2058 Figure 1 Switching Time Test Circuit & Timing Chart IB2 IB1 20 µs Output Input IB2 IB1 RL VCC Duty cycle < 1% ■ Typical Characterisitics Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 IB = −2 mA Common emitter Ta = 25°C Single nonrepetitive pulse −10 −20 −40 −60 −80 Base-emitter saturation voltage VBE (sat) (V) Collector current IC (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) VBE (sat) – IC −0.01 −0.1 −10 Common emitter IC/IB = 30 Single nonrepetitive pulse Ta = 100°C −55 −0.001 −0.01 −0.1 Common emitter IC/IB = 30 Single nonrepetitive pulse Ta = 100°C −55 Collector current IC (A) Base-emitter voltage VBE (V) IC – VBE −0.4 −0.8 −1.2 −1.6 −2.0 Common emitter VCE = −2 V Single nonrepetitive pulse Ta = 100°C −55 25 Collector current IC (A) hFE – IC DC current gain hFE 100 1000

10000 Common emitter

VCE = −2 V Single nonrepetitive pulse Ta = 100°C −55

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA2058 ■ Typical Characterisitics Pulse width tw (s) rth – tw Transient thermal resistance rth (°C/W) 0.001 0.01 0.1 1 10 100 1000 1000 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 100 Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (A) −0.01 −0.1 −1 −10 −100 −0.1 −10 IC max (pulsed) ♦ DC operation * (Ta = 25°C) VCEO max IC max (continuous) 10 s♦* 10 ms♦ 1 ms♦ 100 ms♦* ♦: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature.