2SA2057 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

isc website： www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor 2SA2057

DESCRIPTION

  • High speedswitching
  • Lowcollector-emittersaturation voltage
  • 100% avalanche tested
  • Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation

APPLICATIONS

  • Power supply foraudio &visual equipmentssuchas TVSand VCRS
  • Industrialequipmentssuch asDC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -60 V VCEO Collector-EmitterVoltage -60 V VEBO Emitter-BaseVoltage -6 V IC CollectorCurrent-Continuous -3 A IB BaseCurrent-Continuous -6 A PC CollectorPowerDissipation @Ta=25℃ 2.0 W CollectorPowerDissipation @TC=25℃ 20 TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃

isc website： www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor 2SA2057 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-10mA;IB=0 -60 V VCE(sat) Collector-EmitterSaturationVoltage IC=-3A;IB=-375mA -0.5 V ICBO CollectorCutoffCurrent VCB=-60V;IE=0 -100 μA IEBO EmitterCutoffCurrent VEB=-6V;IC=0 -1 mA hFE-1 DCCurrentGain IC=-1A;VCE=-4V 120 320 hFE-2 DCCurrentGain IC=-3A;VCE=-4V 40 fT Current-Gain—BandwidthProduct IC=-100mA;VCE=-10V 90 MHz