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1Publication date: January 2003 SJD00284BED 2SA2057 Silicon PNP epitaxial planar type Power supply for audio & visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters ■ Features
- High speed switching (tstg: storage time/tf: fall time is short)
- Low collector-emitter saturation voltage VCE(sat)
- Superior forward current transfer ratio hFE linearity
- TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO −60 V Collector-emitter voltage (Base open) V CEO −60 V Emitter-base voltage (Collector open) V EBO −6V Collector current I C −3A Peak collector current * ICP −6A Collector power dissipation P C 20 W Ta = 25°C 2.0 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V CEO IC = −10 mA, IB = 0 −60 V Collector-base cutoff current (Emitter open) ICBO VCB = −60 V, IE = 0 −100 µA Collector-emitter cutoff current (Base open) ICEO VCE = −60 V, IB = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 −1m A Forward current transfer ratio h FE1 * VCE = −4 V, IC = −1 A 120 320 hFE2 VCE = −4 V, IC = −3 A 40 Collector-emitter saturation voltage V CE(sat) IC = −3 A, IB = − 0.375 A − 0.5 V Transition frequency f T VCE = −10 V, IC = − 0.1 A, f = 10 MHz 90 MHz Turn-on time t on IC = −1 A, Resistance loaded 0.15 0.30 µs Storage time t stg IB1 = − 0.1 A, IB2 = 0.1 A 0.4 0.7 µs Fall time t f VCC = 50 V 0.10 0.15 µs ■ Electrical Characteristics TC = 25°C ± 3°C Unit: mm Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification 1.4±0.2 1.6±0.2 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 123 2.6±0.1 2.9±0.2 4.6±0.2 φ 3.2±0.1 3.0±0.5 9.9±0.3 15.0±0.513.7±0.2 4.2±0.2 Solder Dip Rank Q P hFE1 120 to 250 160 to 320 1 : Base 2 : Collector 3 : Emitter Internal Connection B C E Note) *: Non-repetitive peak collector current
2 SJD00284BED
hFE IC Safe operation area PC Ta IC VBE VCE(sat) IC − 0.001 − 0.01 − 0.1 −10 Ta = 100°C −25°C 25°C IC / IB = 8 Collector current IC (A) Collector-emitter saturation voltage VCE(sat) (V) 100 1 000 10 000 Ta = 100°C −25°C25°C VCE = −4 V Collector current IC (A) Forward current transfer ratio hFE −1 −10 −100 −1 000 − 0.01 − 0.1 −10 −100 t = 10 ms t = 1 ms t = 1 s Non repetitive pulse TC = 25°C ICP IC Collector-emitter voltage VCE (V) Collector current IC (A) Rth t 0 40 80 14020 120 60 160 100 (1) T C = Ta (2) Without heat sink (1) (2) Collector power dissipation PC (W) Ambient temperature Ta (°C) 0 −1.2− 0.8− 0.4 Ta = 100°C −25°C 25°C VCE = −4 V Base-emitter voltage VBE (V) Collector current IC (A) 0.001 1000.01 1 0.1 10 1 000 0.1 100 1 000 Ta = 25°C (1) Without heat sink (2) With 100 × 100 × 2 mm Al (1) (2) Time t (s) Thermal resistance Rth (°C/W)
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications:
- Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
- Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.