2SA2040

2SA2040_12 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 10

Technical content

Features

• Adoption of FBET and MBIT processes • Large current capacitance
• Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Specifi cations ( ): 2SA2040 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -50)100 V Collector-to-Emitter Voltage V CES (- -50)100 V Collector-to-Emitter Voltage V CEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)8 A Collector Current (Pulse) I CP (- -)11 A Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003

60612 TKIM/62405EA MSIM TB-00001403/30101 TSIM TA-3233

PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching

Applications

http://semicon.sanyo.com/en/network Product & Package Information

• Package : TP • Package : TP-FA
• JEITA, JEDEC : SC-64, TO-251 • JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 500 pcs./bag • Minimum Packing Quantity : 700 pcs./reel Marking Packing Type (TP-FA) : TL Electrical Connection (TP , TP-FA) TL 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-F A 2SA2040-E 2SC5707-E 2SA2040-TL-E 2SC5707-TL-E A2040 C5707 LOT No.LOT No. 2,4 2SC5707 2,4 2SA2040

No.6913-2/10 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I B (- -)2 A Collector Dissipation P C 1.0 W Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)40V, IE=0A (- -)0.1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)0.1 μA DC Current Gain h FE VCE=(- -)2V, IC=(- -)500mA 200 560 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)500mA (290)330 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (50)28 pF Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)2A, IB=(- -)40mA (- -)0.83 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -50)100 V Collector-to-Emitter Breakdown Voltage V (BR)CES IC=(- -)100μA, RBE=0Ω (- -50)100 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-On Time t on See specifi ed Test Circuit. (40)30 ns Storage Time t stg (225)420 ns Fall Time t f 25 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SA2040-E TP 500pcs./bag Pb Free 2SC5707-E TP 500pcs./bag 2SA2040-TL-E TP-FA 700pcs./reel 2SC5707-TL-E TP-FA 700pcs./reel + +50Ω INPUT OUTPUT VR RB RL VCC=25V 100μF 470 μF VBE= - -5V PW=20μs IB1 IB2 D.C.≤1% 20IB1= - -20IB2=IC=2.5A For PNP, the polarity is reversed.

No.6913-3/10 IC -- VCE IB=0mA --7 --6 --5 --4 --3 --2 --1 IC -- VCE --10mA --20mA --30mA --40mA --50mA--60mA --70mA --80mA --90mA --100mA 10mA 20mA 30mA 40mA 50mA 60mA 70mA80mA90mA 100mA IB=0mA IT00206 IT00207 2SC5707 2SA2040 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VBE 2SC5707 VCE=2V Ta=75 --25 °C Ta=75 --25 2SA2040 VCE= --2V --8 --7 --6 --5 --4 --3 --2 --1 IC -- VBE IT00208 IT00209Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A --1000 --100 --1.0 --10 VCE(sat) -- IC Ta=75 25°C--25°C IT00212 2SA2040 IC / IB=20 1000 100 1.0 0.01 0.1 23 5 7 23 5 7 23 5 7 1.0 10 VCE(sat) -- IC Ta=75 --25°C IT00214 2SC5707 IC / IB=20 Ta=75°C 25°C --25°C 1000 100 hFE -- IC 2SA2040 VCE= --2V IT00210 1000 100 0.01 325 100.173 25 7 3 25 71.0 hFE -- IC Ta=75°C --25°C 25°C 2SC5707 VCE=2V IT00211Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV 25°C

No.6913-4/10 --10000 --1000 --10 --100 VCE(sat) -- IC IT00213 Ta=75 25°C--25°C 2SA2040 IC / IB=50 0.01 0.1 23 5 7 23 5 7 23 5 7 1.0 10 10000 1000 100 VCE(sat) -- IC IT00215 Ta=75°C 25°C --25°C 2SC5707 IC / IB=50 Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV 10000 1000 100 0.01 0.1 1.0 10 Ta= --25°C 25°C75°C 23 5 7 23 5 7 23 5 7 2SC5707 IC / IB=50 VBE(sat) -- IC IT00217 VBE(sat) -- IC--10000 --1000 --100 Ta= --25°C 25°C75°C 23 5 7 23 5 7 23 5 7 2SA2040 IC / IB=50 IT00216Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- mV Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- mV fT -- IC 100 1000 --0.01 25 773 2 5 7 32 5 7 3--0.1 --1.0 --105 IT00220 2SA2040 VCE= --10V fT -- IC 100 1000 0.01 25 773 2 5 7 32 5 7 30.1 1.0 105 IT00221 2SC5707 VCE=10V Cob -- VCB5 100 0.1 23 3 3 57757 1.0 2 10 255 IT00219 2SC5707 f=1MHz Cob -- VCB5 100 5 --0.1 23 377 52 3 7 5--1.0 --10 25 IT00218 2SA2040 f=1MHz Collector Current, IC -- A Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF

No.6913-5/10 1.2 1.0 0.8 0.6 0.4 0.2 2006 0 40 80 100 140 120 160 PC -- Ta IT02972 A S O 1.0 0.01 0.1 1.00.1 10 100 25 3725 3725 37 IT02971 100ms 10ms 1ms 500 µs 100 µs 2SA2040 / 2SC5707 DC Operation (Ta=25 °C) DC Operation (Tc=25 °C) Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V 2SA2040 / 2SC5707 Tc=25°C Single pulse For PNP, the minus sign(--)is omitted No heat sink ICP=11A IC=8A 2006 0 40 80 100 140 120 160 PC -- Tc IT02973 2SA2040 / 2SC5707 Case Temperature, Tc -- °C Collector Dissipation, PC -- W

No.6913-6/10 Taping Specifi cation 2SA2040-TL-E, 2SC5707-TL-E

No.6913-7/10 Outline Drawing Land Pattern Example 2SA2040-TL-E, 2SC5707-TL-E Mass (g) Unit 0.282 * For reference mm Unit: mm 7.0 1.5 2.3 2.02.5 2.3 7.0

No.6913-8/10 Bag Packing Specifi cation 2SA2040-E, 2SC5707-E

No.6913-9/10 Outline Drawing 2SA2040-E, 2SC5707-E Mass (g) Unit 0.315 * For reference mm

No.6913-10/10PS This catalog provides information as of June, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.