2SA2028 PANASONIC

Document overview

Silicon PNP epitaxial planer type For DC-DC converter I Features

Large current capacitance
Low collector to emitter saturation voltage
High-speed switching
Small type package, allowing downsizing and thinning of the equipment. I Absolute Maximum Ratings Ta = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO −20 V Collector to emitter voltage V CEO −20 V Emitter to base voltage V EBO −5V Peak collector current I CP −3A Collector current I C −1A Collector power dissipation P C 150 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage V CBO IC = −10 µA, IE = 0 −20 V Collector to emitter voltage V CEO IC = −1 mA, IB = 0 −20 V Emitter to base voltage V EBO IE = −10 µA, , IC = 0 −5V Forward current transfer ratio * hFE VCE = −2 V, IC = −100 mA 160 560 Collector to emitter saturation voltage V CE(sat) IC = −200 mA, IB = −10 mA −40 −100 mV Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF Transition frequency f T VCB = −10 V, IE = 10 mA 170 MHz f=200 MHz I Electrical Characteristics Ta = 25°C ± 3°C Marking Symbol: AT 2.1±0.1 1.3±0.1 0.3+0.1 –0.0 2.0±0.2 1.25±0.10 (0.425) (0.65) (0.65) 0.2±0.1 0.9±0.10 to 0.1 0.9+0.2 –0.1 0.15+0.10 –0.05 10° 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S Mini Type Package (3-pin)