2SA2025

2SA2025 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Adoption of MBIT processes.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• Ultrasmall-sized package permitting applied sets to be made small and slim.
• High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta = 25˚C Continued on next page. 4.0 0.4 0.5 0.4 0.6 15.0 3.0 1.8 123 2.2 0.4 1.31.3 3.0 3.8nom 0.7 0.7 retemaraPl obmySs noitidnoCs gnitaRt inU egatloVesaB-ot-rotcelloCV OBC 51–V egatloVrettimE-ot-rotcelloCV OEC 21–V egatloVesaB-ot-rettimEV OBE 5–V tnerruCrotcelloCI C 3–A )esluP(tnerruCrotcelloCI PC 5–A tnerruCesaBI B 006–A m noitapissiDrotcelloCP C 55.0W erutarepmeTnoitcnuJj T 051 erutarepmeTegarotSg tsT 051+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am tnerruCffotuCrotcelloCI OBC V BC I,V21–= E 0=1 .0–A µ tnerruCffotuCrettimEI OBE V BE I,V4–= C 0=1 .0–A µ niaGtnerruCCDh EF V EC I,V2–= C Am005–=0 020 65 tcudorPhtdiwdnaB-niaGf T V EC I,V2–= C Am005–=0 82z HM ecnaticapaCtuptuOb oCV BC zHM1=f,V01–= 63F p egatloVnoitarutaSrettimE-ot-rotcelloCV EC )tas(I C I,A5.1–= B Am03–=0 11–5 61–V m egatloVnoitarutaSrettimE-ot-esaBV EB )tas(I C I,A5.1–= B Am03–=5 8.0–2 .1–V

No.6404–2/4 Continued on preceding page. Switching Time Test Circuit + +50Ω INPUT OUTPUT VR 1kΩ R L VCC =- -5V 220µF 470 µF VBE =5V PW=20 µs IB1 IB2 D.C.≤1% - -20IB1= 20IB2= IC =- -1.5A retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBesaB-ot-rotcelloCV OBC)RB( IC I,Aµ01–= E 0=5 1–V egatloVnwodkaerBrettimE-ot-rotcelloCV OEC)RB( IC R,Am1–= EB =¥ 21–V egatloVnwodkaerBesaB-ot-rettimEV OBE)RB( IE I,Aµ01–= C 0=5 –V emiTNO-nruTt no tiucriCtseTdeificepseeS 03s n emiTegarotSt gts tiucriCtseTdeificepseeS 09 sn emiTllaFt f tiucriCtseTdeificepseeS 01s n --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 IC -- VCE --2mA --4mA --8mA --12mA--14mA --10mA --6mA --16mA IB =0 IT01709 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 IC -- VBE IT01711 V CE =--2V --200 --180 --160 --140 --120 --100 --80 --60 --40 --20 IC -- VCE --0.1mA --0.2mA --0.3mA --0.4mA --0.6mA --0.5mA --0.8mA --0.7mA IB =0 IT01710 1000 100 1.0 hFE -- IC IT01712 V CE =--2V Collector Current, IC –ACollector Current, IC –A Collector-to-Emitter Voltage, VCE –V Collector Current, IC –A Collector-to-Emitter Voltage, VCE –V Base-to-Emitter Voltage, VBE –V DC Current Gain, hFE Collector Current, IC –A

No.6404–3/4 --1.0 --0.1 --10 --0.01 5 7 --0.1 23 5 7 2 2 35 7--1.0 --10 A S O IT01718 1000 100 1.0 --0.1 --1.023 5 7 --1023 5 2 3 5 7 Cob -- VCB IT01716 f=1MHz --10 --1.0 --0.1 --0.01 --0.123 5 7 23 5 7 23 5 --1.0 VBE (sat) -- IC IT01715 IC / IB =50 1000 100 --0.01 --0.1273 5 7 2 3 5 7 2 3 5 --1.0 fT -- IC IT01717 V CE =--2V PC -- Ta 0.8 0.7 0.6 0.55 0.5 0.4 0.3 0.2 0.1 200 40 60 80 100 120 140 160 IT01719 --0.1 --0.01 --0.001 VCE (sat) -- IC IT01713 --0.1 --0.01 VCE (sat) -- IC IT01714 IC / IB =50 500 µs1ms100ms DC operation Ta=25°C Single pulse ICP =--5A IC =--3A IC / IB =20 Collector Current, IC –A Collector-to-Emitter Saturation Voltage, VCE (sat) – V Collector Current, IC –A Base-to-Emitter Saturation Voltage, VBE (sat) – V Collector Current, IC –A Collector-to-Emitter Saturation Voltage, VCE (sat) – V Gain-Bandwidth Product, fT – MHz Collector Current, IC –A Output Capacitance, Cob – pF Collector-to-Base V oltage, VCB -- V Collector Current, IC –A Collector-to-Emitter Voltage, VCE –V Collector Dissipation, PC –W Ambient Temperature, Ta – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice. 2SA2025 PS No.6404–4/4