2SA2021 PANASONIC

Document overview

Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5609 I Features

High foward current transfer ratio hFE
SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO −60 V Collector to emitter voltage V CEO −50 V Emitter to base voltage V EBO −7V Peak collector current I CP −200 mA Collector current I C −100 mA Collector power dissipation P C 100 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = −20 V, IE = 0 − 0.1 µA ICEO VCE = −10 V, IB = 0 −100 µA Collector to base voltage V CBO IC = −10 µA, IE = 0 −60 V Collector to emitter voltage V CEO IC = −100 µA, IB = 0 −50 V Emitter to base voltage V EBO IE = −10 µA, IC = 0 −7V Forward current transfer ratio h FE VCE = −10 V, IC = −2 mA 180 390 Collector to emitter saturation voltage V CE(sat) IC = −100 mA, IB = −10 mA − 0.3 − 0.5 V Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Transition frequency f T VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz I Electrical Characteristics Ta = 25°C ± 3°C Marking Symbol: 3E 1: Base 2: Emitter 3: Collector SSS Mini Type Package (3-pin) 1.20±0.050.52±0.03 0 to 0.01 0.15 min. 0.80±0.050.15 min. 0.33 (0.40)(0.40) 0.80±0.05 1.20±0.05 +0.05 –0.02 0.10+0.05 –0.02 0.23+0.05 –0.02