2SA2016

2SA2016_12 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 8

Technical content

Features

• Adoption of FBET and MBIT processes • Large current capacity
• Low collector-to-emitter saturation voltage • High-speed switching
• Ultrasmall package facilitales miniaturization in end products
• High allowable power dissipation ( )2SA2016 Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (-50)100 V Collector-to-Emitter Voltage V CES (-50)100 V Collector-to-Emitter Voltage V CEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)6 V Continued on next page. Package Dimensions unit : mm (typ) 7008B-003

72512 TKIM/62405EA MSIM TB-00001406/52501 TS KT TA-3259

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications http://semicon.sanyo.com/en/network Product & Package Information

• Package : PCP
• JEITA, JEDEC : SC-62, SOT-89, TO-243 Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking Electrical Connection TD 1 : Base 2 : Collector 3 : Emitter SANYO : PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 Top View Bottom View 0.75 2SA2016-TD-E 2SC5569-TD-E AW LOT No. FF LOT No. 2SC55692SA2016 2SC5569 2SA2016

No.6309-2/8 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I C (- -)7 A Collector Current (Pulse) I CP (- -)10 A Base Current I B (- -)1.2 A Collector Dissipation P C When mounted on ceramic substrate (250mm ×0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)40V, IE=0A (- -)0.1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)0.1 μA DC Current Gain h FE VCE=(- -)2V, IC=(- -)500mA 200 560 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)500mA (290)330 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (50)28 pF Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)2A, IB=(- -)40mA (- -)0.83 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -50)100 V Collector-to-Emitter Breakdown Voltage V (BR)CES IC=(- -)100μA, RBE=0Ω (- -50)100 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-On Time t on See specifi ed Test Circuit. (40)30 ns Storage Time t stg (225)420 ns Fall Time t f 25 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SA2016-TD-E PCP 1,000pcs./reel Pb Free 2SC5569-TD-E PCP 1,000pcs./reel VR RB VCC=25VVBE= --5V + + 50Ω INPUT OUTPUT RL 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2=2.5A For PNP, the polarity is reversed.

No.6309-3/8 IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IB=0mA --7 --6 --5 --4 --3 --2 --1 --10mA --20mA --30mA --40mA --50mA--60mA --70mA --80mA --90mA --100mA 10mA 20mA 30mA 40mA 50mA 60mA70mA 80mA 90mA 100mA IB=0mA IT00206 IT00207 2SC5569 2SA2016 hFE -- IC hFE -- IC DC Current Gain, hFE Collector Current, IC -- ACollector Current, IC -- A DC Current Gain, hFE IC -- VBEIC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A 2SC5569 VCE=2V Ta=75 --25 °C Ta=75 --25 2SA2016 VCE= --2V --8 --7 --6 --5 --4 --3 --2 --1 IT00208 IT00209 --1000 --100 --1.0 --10 Ta=75 --25°C IT00212 2SA2016 IC / IB=20 1000 100 1.0 0.01 0.1 23 5 7 23 5 7 23 5 7 1.0 10 Ta=75 --25°C IT00214 2SC5569 IC / IB=20 Ta=75°C 25°C --25°C 1000 100 2SA2016 VCE= --2V IT00210 1000 100 0.01 325 100.173 25 7 3 25 71.0 Ta=75°C --25°C 25°C 2SC5569 VCE=2V IT00211 25°C 25°C VCE(sat) -- IC VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A

No.6309-4/8 --0.01 --0.123 5 7 23 5 7 2 3 5 7 --1.0 --10 --10000 --1000 --10 --100 IT00213 Ta=75 75°C 25°C --25°C Ta= --25 2SA2016 IC / IB=50 0.01 0.1 23 5 7 23 5 7 23 5 7 1.0 10 10000 1000 100 IT00215 Ta=75°C 25°C --25°C 2SC5569 IC / IB=50 VCE(sat) -- IC VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A VBE(sat) -- IC VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- mV Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- mV 10000 1000 100 0.01 0.1 1.0 10 Ta= --25°C 75°C 23 5 7 23 5 7 23 5 7 2SC5569 IC / IB=50 IT00217 --10000 --1000 --100 Ta= --25°C 75°C 23 5 7 23 5 7 23 5 7 2SA2016 IC / IB=50 IT00216 25°C25°C 100 1000 --0.01 25 777 7 3 --0.1 25 32 5 3--1.0 --105 IT00220 2SA2016 VCE= --10V 7 100 1000 0.01 25 777 7 3 0.1 25 32 5 31.0 105 IT00221 2SC5569 VCE=10V 100 0.1 23 3 3 57757 1.0 2 10 255 IT00219 2SC5569 f=1MHz 100 5 --0.1 23 3 3777 5 --1.0 2 --10 255 IT00218 2SA2016 f=1MHz Cob -- VCB fT -- IC fT -- IC Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Collector Current, I C -- A Gain-Bandwidth Product, fT -- MHz

No.6309-5/8 A S O PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °CCollector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 2.0 1.5 1.3 1.0 0.5 2006 0 40 80 100 140 120 160 IT00223 1.0 0.01 0.1 1.00.1 10 100 25 3725 3725 37 ICP=10A IC=7A s DC operation IT00222 2SA2016 / 2SC5569 Tc=25°C Single pulse For PNP, the minus sign is omitted. 100ms 10ms 2SA2016 / 2SC5569 100 μs500 μs Mounted on a ceramic board (250mm 2✕0.8mm) PC -- Tc Case Temperature, Tc -- °C Collector Dissipation, PC -- W 4.0 3.5 3.0 2.0 1.5 1.0 0.5 2.5 2006 0 40 80 100 140 120 160 PC -- Tc IT01535 2SA2016 / 2SC5569

No.6309-6/8 Bag Packing Specifi cation 2SA2016-TD-E, 2SC5569-TD-E

No.6309-7/8 Outline Drawing Land Pattern Example 2SA2016-TD-E, 2SC5569-TD-E Mass (g) Unit 0.058 * For reference mm Unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45° 45°

PS No.6309-8/8 This catalog provides information as of July, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.