2SA2016 UTC
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UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 6 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R208-018.B PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes. FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation. SOT-89 *Pb-free plating product number: 2SA2016L ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 2SA2016-AB3-R 2SA2016L-AB3-R SOT-89 B C E Tape Reel 2SA2016L-AB3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AB3: SOT-89 (3) L: Lead Free Plating , Blank: Pb/Sn
2SA2016 PNP PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R208-018.B ABSOLUTE MAXIMUM RATINGS (Ta=25°С) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO -50 V Collector-Emitter Voltage V CEO -50 V Emitter-Base Voltage V EBO -6 V Collector Dissipation Mounted on a ceramic board (250mm2*0.8mm) Pc 1.3 W Collector Dissipation (Tc=25°C) Pc 3.5 W Collector Current Ic -7 A Collector Current Icp -10 A Base Current I B -1.2 A Junction Temperature T J 150 °C Storage Temperature T STG -55 to +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Tc=25¥) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-to-Base Breakdown Voltage BV CBO Ic= -10µA, I E=0 -50 V Collector-to- Emitter Breakdown Voltage BV CEO Ic= -1mA, R BE=∞ -50 V Emitter-to-Base Breakdown Voltage BV EBO Ic=0, I E= -10µA -6 V Collector Cut-Off Current I CBO V CB= -40V, IE=0 -0.1 µA Emitter Cut-Off Current I EBO V EB= -4V, Ic=0 -0.1 µA DC Current Gain h FE V CE= -2V, Ic= -500mA 200 560 Base-Emitter Saturation Voltage V BE(SAT) Ic= -2A, I B= -40mA -0.83 -1.2 V Gain Bandwidth Product f T V CE= -10V, Ic= -500mA 290 MHz Output Capacitance Cob V CB= -10V, f=1MHz 50 pF Turn-on Time t ON See specified Test Circuit 40 ns Storage Time t STG See specified Test Circuit 225 ns Fall Time t F See specified Test Circuit 25 ns
2SA2016 PNP PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R208-018.B SWITCHING TIME TEST CIRCUIT 50Ƹ INPUT RL D.C.Ý1% RB PW=20DŽs VBE=5V V CC= -25V -20IB1=20 IB2=IC= 2.5A VR OUTPUT 100DŽF 470 DŽF + + IB2 IB1
2SA2016 PNP PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R208-018.B TYPICAL CHARACTERISTICS 10040 60 80200 1.0 1.5 0.5 120 140 2.0 Collector Dissipation,Pc -W Ambient Temperature , Pc -Ta Ta -Ċ Collector Current,Ic -A -10 352 ASO -0.1 -1.0 -1.0 3527 - 1 0 0 3527 -0.1 -0.01 -10 Icp = -10A Collector-to-Emitter Saturation Voltage,VCE (SAT) -mV Collector Current,Ic -A -1.0 352 VCE(SAT)-Ic -0.01 -0.1 -1000 3527 - 1 0 3527 -100 -10 -10000 IC/IB=50 Ta =75Ċ Ta =-25Ċ Ta =25Ċ Collector Current ,Ic -A -1.0 352-0.01 -0.1 -10000 3527 - 1 0 3527 -1000 -100 Ta =75Ċ Ta =25ĊTa =-25Ċ VBE(SAT)-Ic Base-to-Emitter Saturation Voltage,VBE(SAT) -V IC/IB=50 Output Capacitance,Cob-pF Collector-to-Base Voltage,VCB-V -0.1 Cob-VCB 5 -0.01 100 352- 1 . 0 35272 Gain-Bandwidth Product,fT-MHz Collector Current,Ic -A -0.1 575 -0.01 1000 3527 -1.03 52 7 100 32- 1 0 f=1MHz fT -Ic VCE= -10V IC= -7A DC Operation 100ms 10ms 1ms DŽs 100DŽs Tc = 25Ċ Collector-to-Emitter Voltage,VCE-V 160
1.3 Mounted on a ceramic board(250mm2
*0.8mm)
2SA2016 PNP PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R208-018.B TYPICAL CHARACTERISTICS(Cont.) Collector Current Ic -A -2.0 -0.8 -1.2 -1.6-0.4 Collector -to-Emitter Voltage,VCE-V -10mA VCE= -2V DC Current Gain, hFE Collector Current,Ic -A -1 .0 352 hFE -Ic -0.01 -0.1 1000 IB=0 Ic-VCE -20mA -30mA -40mA -50mA -60mA -70mA -80mA -90mA -100mA -1.2 -1.4 -8Collector Current ,Ic -A Base-to-Emitter Voltage,VBE-V Ic-VBE Ta =75Ċ Ta =25Ċ Ta =-25Ċ 3527 - 1 0 3527 100 VCE= -2V Ta =75Ċ Ta =25Ċ Ta =-25Ċ Collector-to-Emitter Saturation Voltage, VCE(SAT) -mV Collector Current,Ic -A -1.0 352 VCE(SAT)-Ic -0.01 -0.1 -100 3527 - 1 0 3527 -10 -1.0 -1000 IC/IB=20 Ta =75Ċ Ta =-25Ċ Ta =25Ċ 10040 60 80200 1.5 2.0 2.5 3.0 0.5 1.0 120 140 3.5 4.0 Pc -Tc 160 Collector Dissipation,Pc -W Case Temperature, Tc-Ċ
2SA2016 PNP PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R208-018.B UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.