2SA2012_12 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Adoption of MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • Ultrasmall-sized package permitting applied sets to be made small and slim.
  • High allowable power dissipation. Specifications ( ) : 2SA2012 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -30)40 V Collector-to-Emitter Voltage V CEO (- -)30 V Emitter-to-Base Voltage V EBO (- -)5 V Collector Current I C (- -)5 A Collector Current (Pulse) I CP (- -)8 A Base Current I B (- -)600 mA Collector Dissipation P C Mounted on a ceramic board (250mm2✕0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Marking 2SA2012 : AS 2SC5565 : FB http://semicon.sanyo.com/en/network 40710EA TK IM / 21400TS (KOTO) TA-2520 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA2012 / 2SC5565 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

No.6306-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unitmin typ max Collector Cutoff Current I CBO VCB=(- -)30V, IE=0A (- -)0.1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)0.1 μA DC Current Gain h FE VCE=(- -)2V, IC=(- -)500mA 200 560 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)500mA (350)420 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (30)20 pF Collector-to-Emitter Saturation Voltage VCE(sat)2 I C=(- -)2.5A, IB=(- -)125mA (- -)170 (- -)260 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)1.5A, IB=(- -)30mA (- -)0.83 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -30)40 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)5 V Turn-ON Time t on See specified Test Circuit. (50)30 ns Storage Time t stg See specified Test Circuit. (270)300 ns Fall Time t f See specified Test Circuit. (25)15 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007B-004 + +50Ω INPUT OUTPUT VR RB 24Ω VCC=12V 100μF 470 μF VBE=- -5V PW=20μs IB1 IB2D.C.≤1% IC=20IB1= - -20IB2=500mA (For PNP, the polarity is reversed)

No.6306-3/5 IC -- VCE Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V IC -- VCE Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A hFE -- IC Collector Current, IC -- A DC Current Gain, hFE hFE -- IC Collector Current, IC -- A DC Current Gain, hFE fT -- IC Gain-Brandwidth Product, fT -- MHz fT -- IC Collector Current, IC -- ACollector Current, IC -- A Gain-Brandwidth Product, fT -- MHz IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Ta=75 25°C --25 2SA2012 VCE=--2V --5.0 --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.0 --0.5 --1.5 IT00136 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Ta=75 --25 25°C IT00137 --5 --4 --3 --2 --1 --10mA --20mA --30mA --40mA --50mA --60mA --70mA --80mA --90mA --100mA IB=0mA IT00134 IB=0mA 40mA 50mA 60mA 70mA 80mA100mA 10mA 20mA 30mA 90mA IT00135 2SC55652SA2012 Ta=75°C 25°C --25°C 1000 100 2SA2012 VCE=--2V IT00138 1000 100 0.01 325 100.173 25 7 3 25 71.0 Ta=75°C --25°C 25°C 2SC5565 VCE=2V IT00139 100 1000 --0.01 25 7 7 73 --0.1 25 32 5 3--1.0 --1057 IT00148 2SA2012 VCE=--10V 7 100 1000 0.01 25 7 7 73 0.1 25 32 5 31.0 1057 IT00149 2SC5565 VCE=10V 7$&

No.6306-4/5 Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Cob -- VCB VCE(sat) -- IC VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV VBE(sat) -- IC VBE(sat) -- IC Collector Current, IC -- A Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Base-to-Emitter Saturation V oltage, VBE(sat) -- V VCE(sat) -- IC VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV --1000 --100 --10 *$*# 0.01 0.123 5 7 23 5 7 23 5 7 1.0 10 1000 100 --25°$ 2SC5565 IC / IB=50 1.0 0.1 0.01 0.1 1.0 10 Ta=--25°$ 25°$75°$ 23 5 7 23 5 7 23 5 7 2SC5565 IC / IB=50 IT00145 --10 --1.0 --0.1 Ta=--25°$ 25°$75°$ 23 5 7 23 5 7 23 5 7 2SA2012 IC / IB=50 IT00144 100 0.1 1.0 10 IT00147 2SC5565 f=1MHz 7253 7 25753 2 5 3 100 7--0.1 23 5757 23 5 5 23--1.0 --10 IT00146 2SA2012 f=1MHz 1000 100 0.01 0.123 5 7 23 5 7 23 5 7 1.0 10 Ta=75 --25 IT00142 2SC5565 IC / IB=20 --1000 --100 --10 *$*#

No.6306-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of April, 2010. Specifications and information herein are subject to change without notice. PC -- Ta Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W PC -- Tc Case Temperature, Tc -- °C Collector Dissipation, PC -- W A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IT00151 2.0 1.5 1.3 1.0 0.5 2006 0 40 80 100 140 120 160 Mounted on a ceramic board (250mm 2✕0.8mm) 2SA2012 / 2SC5565 4.0 3.5 3.0 2.0 1.5 1.0 0.5 2.5 2006 0 40 80 100 140 120 160 IT01532 2SA2012 / 2SC5565 1.0 0.01 0.1 1.00.1 10 2 5325 3725 37 IT00150 1ms10ms 100ms 500 μs 100 μs DC operation 2SA2012 / 2SC5565 Tc=25°C Single pulse For PNP, minus sign is omitted ICP=8A IC=5A