2SA2009 PANASONIC

Document overview

Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification I Features

High collector to emitter voltage VCEO
Low noise voltage NV I Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S Mini Type Package (3-pin) Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO −120 V Collector to emitter voltage V CEO −120 V Emitter to base voltage V EBO −5V Peak collector current I CP −50 mA Collector current I C −20 mA Collector power dissipation P C 150 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = −50 V, IE = 0 −100 nA ICEO VCE = −50 V, IB = 0 −1 µA Collector to base voltage V CBO IC = −10 µA, IE = 0 −120 V Collector to emitter voltage V CEO IC = −1 mA, IB = 0 −120 V Emitter to base voltage V EBO IE = −10 µA, IC = 0 −5V Forward current transfer ratio * hFE VCE = −5 V, IC = −2 mA 180 700 Collector to emitter saturation voltage V CE(sat) IC = −20 mA, IB = −2 mA − 0.6 V Noise voltage NV V CE = −40 V, IC = −1 mA, GV = 80 dB 130 mV Rg = 100 kW, Function = FLAT Transition frequency f T VCB = −5 V, IE = 2 mA, f = 200 MHz 120 MHz I Electrical Characteristics Ta = 25°C ± 3°C 2.1±0.1 1.3±0.1 0.3+0.1 –0.0 2.0±0.2 1.25±0.10 (0.425) (0.65) (0.65) 0.2±0.1 0.9±0.10 to 0.1 0.9+0.2 –0.1 0.15+0.10 –0.05 10˚ Marking Symbol: AR Note) *: Rank classification Rank R S T hFE 180 to 360 260 to 520 360 to 700