2SA2004 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscSiliconPNPPowerTransistor 2SA2004

DESCRIPTION

  • SiliconPNPepitaxialplannertype
  • 100% avalanchetested
  • MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation

APPLICATIONS

  • Poweramplifierapplications
  • Driverstage amplifierapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -60 V VCEO Collector-EmitterVoltage -60 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -8 A IB BaseCurrent-Continuous -1 A Pc CollectorPowerDissipation @TC=25℃ 20 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor 2SA2004 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=-10mA;IB=0 -60 V VCE(sat) Collector-EmitterSaturationVoltage IC=-5A;IB=-0.25A -1.2 V VBE(sat) Collector-EmitterSaturationVoltage IC=-5A;IB=-0.25A -1.7 V ICBO CollectorCutoffCurrent VCB=-60V;IE=0 -10 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -10 μA hFE-1 DCCurrentGain IC=-0.1A;VCE=-2V 100 320 hFE-2 DCCurrentGain IC=-5A;VCE=-2V 30