2SA2004 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon PNP epitaxial planer type For power amplification I Features

  • High forward current transfer ratio hFE
  • Satisfactory linearity of forward current transfer ratio hFE
  • Dielectric breakdown voltage of the package: > 5 kV
  • High-speed switching I Absolute Maximum Ratings TC = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO −60 V Collector to emitter voltage V CEO −60 V Emitter to base voltage V EBO −5V Peak collector current I CP −16 A Collector current I C −8A Collector power TC = 25°CP C 20 W dissipation Ta = 25°C 2.0 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = −60 V, IE = 0 −100 µA ICEO VCE = −60 V, IE = 0 −100 µA Collector to emitter voltage V CEO IC = −10 mA, IB = 0 −60 V Forward current transfer ratio h FE1 VCE = −2 V, IC = − 0.1 A 100 230 hFE2 VCE = −2 V, IC = −5 A 30 Collector to emitter saturation voltage V CE(sat) IC = −5 A, IB = − 0.25 A −1.2 V Base to emitter saturation voltage V BE(sat) IC = −5 A, IC = − 0.25 A −1.7 V Turn-on time t on IC = −4 A, IB1 = −400 mA 0.2 0.5 µs Storage time t stg IB2 = 400 mA, VCC = 50 V 0.1 0.15 µs Fall time t f 0.5 1.0 µs 1.4±0.2 1.6±0.2 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 123 2.6±0.1 2.9±0.2 4.6±0.2 φ 3.2±0.1 3.0±0.5 9.9±0.3 15.0±0.513.7±0.2 4.2±0.2 Solder Dip 1: Base 2: Collector 3: Emitter