2SA1981SF_15 KEXIN
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- Manufacturer or author: Provided By digicamel.com
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High hFE: hFE=100 to 320 Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -35 V Vegatlovrettime-rotcelloC CEO -30 V Vegatlovesab-rettimE EBO -5 V ItnerrucrotcelloC C -800 mA PnoitapissidrotcelloC C 200 mW TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 PNP Transistors 2SA1981SF
- Complementary pair with 2SC5344SF Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -500 μA， IE=0 -35 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -30 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -35 V , IE=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB=- 20mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-500 mA, IB=- 20mA -1.2 DC current gain hFE VCE= -1V, IC= -100mA 100 320 Output capacitance Cob VCE= -10V,IE=0,f=1MHz 19 pF Transition frequency fT VCE= -5V, IE= -10mA 120 MHz V V nA ■ Classification of hfe(1) 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 Type 2SA1981SF-O 2SA1981SF-Y Range 100-200 160-320 Marking EAO* EAY*
www.kexin.com.cn2 Transistors PNP Transistors 2SA1981SF ■ Typical Characterisitics Fig. 3 IC - VCE Fig. 2 IC -VBE Fig. 1 Pc-Ta Fig. 4 hFE - IC Fig. 5 VCE(SAT) - IC