2SA1980UF_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SA1980UF ■ Features
- Low collector saturation voltage
- Low output capacitance : Cob=4pF(Typ.)
- Complements to 2SC5343UF
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -150 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB= 0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 Base - emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1.2 DC current gain hFE VCE= -6V, IC= -2mA 70 700 Noise figure NF VCE=-6V, IC=-0.1mA f=1KHz, Rg=10KΩ 10 dB Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 7 pF Transition frequency fT VCE= -10V, IC= -1mA 80 MHz V V uA ■ Classification of hfe Type 2SA1980UF-O 2SA1980UF-Y 2SA1980UF-G 2SA1980UF-L Range 70-140 120-240 200-400 300-700 Marking CO CY CG CL
www.kexin.com.cn2 Transistors PNP Transistors 2SA1980UF ■ Typical Characterisitics Fig. 3 IC - VCE Fig. 4 hFE - IC Fig. 5 VCE(sat) - IC Fig. 2 IC - VBE Fig. 1 PC - Ta