2SA1961 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 n Features l High collector to emitter voltage VCEO . n Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings –200 –200 – 0.1 –70 150 –55 ~ +150 Unit V V V A mA W ˚Cn Electrical Characteristics (Ta=25˚C) Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol V CEO V EBO hFE *1 V CE(sat) fT C ob Conditions IC = –100mA, IB = 0 IE = –1mA, IC = 0 V CE = –10V , IC = –5mA IC = –50mA, IB = –5mA V CB = –5V , IE = 10mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –200 typ max 150 –2.5 Unit V V V MHz pF Unit: mm 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 *1hFE Rank classification Rank P Q hFE 30 ~ 100 60 ~ 150 * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type)

0 160 40 120 80 14020 100 60 2.0 1.6 1.2 0.8 0.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –120 –100 –80 –60 –40 –20 Ta=25˚C – 0.9mA – 0.8mA – 0.7mA – 0.6mA – 0.5mA – 0.4mA – 0.3mA – 0.2mA – 0.1mA IB=–1.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) –120 –100 –80 –60 –40 –20 VCE =–10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 240 180 150 210 120 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C C ob —V CB