2SA1954_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1954 ■ Features

  • Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA
  • Large collector current: IC = −500 mA (max)

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -12 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 Base Current IB -50 Collector Power Dissipation PC 100 mW Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 125 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -15 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB= 0 -12 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -15V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 VCE(sat)1 IC=-10mA, IB=-0.5mA -15 -30 VCE(sat)2 IC=-200mA, IB=-10mA -110 -250 Base - emitter saturation voltage VBE(sat) IC=-200mA, IB=-10mA -0.87 -1.2 V DC current gain hFE VCE= -2V, IC= -10mA 300 1000 Collector-emitter on resistance Ron IB=-1mA,Vin=-1Vrms,f=1KHz 0.9 Ω Turn-ON Time ton 40 Storage Time tstg 280 Turn-OFF Time toff 45 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 4.2 pF Transition frequency fT VCE= -2V, IC= -10mA 130 MHz V uA Collector-emitter saturation voltage mV See specified Test Circuit. ns ■ Classification of hfe Type 2SA1954-A 2SA1954-B Range 300-600 500-1000 Marking GA GB

www.kexin.com.cn2 Transistors PNP Transistors 2SA1954 Switching Time Test Circuit IB1 = −IB2 = 5 mA ■ Typical Characterisitics

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1954 ■ Typical Characterisitics