2SA1954 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Low saturation voltage VCE(sat) (1) = -15 mV (typ.) Large collector current IC = -500 mA (max) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -15 V Collector-emitter voltage V CEO -12 V Emitter-base voltage V EBO -5 V Collector current I C -500 mA Base current I B -50 mA Collector power dissipation P C 100 mW Junction temperature Tj 125 Storage temperature range T stg - 5 5t o+ 1 2 5
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current I CBO VCB =- 1 5V ,IE =0 - 0 . 1 ì A Emitter cut-off current I EBO VEB =- 5V ,IC =0 - 0 . 1 ì A DC current gain h FE VCE =- 2V ,IC = -10 mA 300 1000 VCE (sat)(1) I C =- 1 0m A ,IB = -0.5 mA -15 -30 mV VCE (sat)(2) I C = -200 mA, IB = -10 mA -110 -250 mV Base-emitter saturation voltage V BE (sat) IC = -200 mA, IB = -10 mA -0.87 -1.2 V Transition frequency f T VCE =- 2V ,IC = -10 mA 80 130 MHz Collector output capacitance C ob VCB = -10V, IE =0 ,f=1M H z 4 . 2 p F Collector-emitter on resistance R on IB =- 1 m A,Vin =- 1 Vrms, f = 1KHz 0.9 Ù Switching Turn-on time t on 40 ns Switching Storage time t stg 280 ns Switching Fall time t f IB1 =- IB2 =5 m A 45 ns Collector-emitter saturation voltage 2SA1954 hFE Classification Marking GA GB hFE 300 600 500 1000