2SA1952TLQ LITTELFUSE
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1/2 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A High-speed Switching Transistor (-60V, -5A) 2SA1952 Features Dimensions (Unit : mm) 1) High speed switching. (tf : Typ. 0.15 s at IC = -3A) 2) Low VCE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. Absolute maximum ratings (Ta = 25C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −100 −60 150 −55~+150 Unit V V V A −10 A(Pulse) W W(Tc=25°C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector power dissipation Packaging specifications and h FE Type 2SA1952 CPT3 Q 2500 TL Package hFE Code Basic ordering unit (pieces) Electrical characteristics (Ta = 25C) Min. Typ. Max. Unit Conditions BVEBO ICBO IEBO VCE(sat) fT Cob 120 130 −10 −10 −0.3 270 V V μA μA V MHz pF I C = −50μA BVCEO −60 − − VI C = −1mA IE = −50μA VCB = −100V VEB = −5V IC/IB= −3A/ −0.15A −− −0.5 VI C/IB= −4A/ −0.2A VBE(sat) −− −1.5 VI C/IB= −4A /−0.2A −− −1.2 VI C/IB= −3A/ −0.15A hFE1 hFE2 VCE = −2V , IC = −1A 40 −− − VCE = −2V , IC = −3A VCE = −10V , IE = 0.5A , f = 30MHz VCB = −10V , IE = 0A , f = 1MHz ton −− 0.3 μsI C = −3A , RL = 10Ω tstg −− 1.5 μsI B1 = −IB2 = −0.15A tf −− 0.3 μsV CC −30V Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time Collector-base breakdown voltage Parameter BVCBO Symbol −100 2SA1952 (3) Emitter(Source) (2) Collector(Drain) (1) Base(Gate) ROHM : CPT3 EIAJ : SC-63 2.3 0.5 1.0 0.5 9.5 2.5 0.8Min. 1.5 6.5 2.3 (2)(3) C0.5 0.65 0.9 (1) 0.75 2.3 0.9 1.55.5 5.1
2/2 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A Data Sheet 2SA1952 Electrical characteristics curves COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics Tc =25°C IB=0A −10mA −20mA −30mA −40mA −50mA −60mA −70mA −100mA −80m A −90m A BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.2 Ground emitter propagation characteristics −10 −0.5 −0.2 −0.1 −0.01 −0.02 −0.05 Ta=100°C 25°C −25°C VCE= −2V Pulsed COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hEF Fig.3 DC current gain vs. collector current 100 200 500 1000 Pulsed VCE= −2V Ta=100°C 25°C −25°C COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) Fig.4 Collector-emitter saturation voltage Base-emitter saturation voltage vs. collector current −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −10 Pulsed IC/IB=20 Ta= −25°C Ta=100°C 25°C 25°C −25°C 100°C VBE(sat) VCE(sat) EMITTER CURRENT : IE (A) TRANSITION FREQUENCY: fT (MHz) Fig.5 Resistance ratio vs. emitter current 100 200 500 1000 Ta=25°C VCE= −10A COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.6 Collector output capacitance vs. collector-base voltage 200 500 1000 2000 5000 10000 100 Ta=25°C f=1MHz IE=0A COLLECTOR CURRENT : IC (A) TURN ON TIME : ton(μs) STRAGE TIME : tstg(μs) FALL TIME : tf(μs) Fig.7 Switching characteristics 0.2 0.5 0.1 0.05 0.02 0.01 IE=20IB1= −20IB2 tstg ton tf
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