2SA1890

2SA1890_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1890 ■ Features

• Low collector to emitter saturation voltage VCE(sat).
• High collector to emitter voltage VCEO. 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Colletor Current - Pulse ICP -1.5 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB= 0 -80 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.2 -0.3 Base - emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -0.85 -1.2 VCE= -2V, IC= -100mA 120 340 VCE= -2V, IC= -500mA 60 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 15 30 pF Transition frequency fT VCE= -10V, IE= 50mA,f=200MHz 120 MHz V V uA DC current gain hFE ■ Classification of hfe(1) Type 2SA1890-Q 2SA1890-R Range 120-240 170-340 Marking 1ZQ 1ZR
• Complementary to 2SC5026.

www.kexin.com.cn2 Transistors PNP Transistors 2SA1890 ■ Typical Characterisitics 0610 40 12080 14020 10060 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Ta=25˚C IB=–8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=10 Ta=–25˚C 25˚C –75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 300 250 200 150 100 VCE=–2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 200 160 120 180 140 100 VCE=–10V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) 1 10 100 10003 30 300 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC IaT— C — VCE VCE(sat) — IC VBE(sat) — IC hFE — IC fT — IE Cob — VCB