2SA1890 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 n Features l Low collector to emitter saturation voltage VCE(sat). l High collector to emitter voltage VCEO . l Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC =25˚C) Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings –80 –80 –1.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = –40V, IE = 0 IC = –10mA, IE = 0 IC = –1mA, IB = 0 IE = –10mA, IC = 0 V CE = –2V , IC = –100mA V CE = –2V , IC = –500mA*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –80 –80 120 typ – 0.2 – 0.85 120 max – 0.1 340 – 0.3 –1.2 Unit mA V V V V V MHz pF Unit: mm 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321 *1hFE1 Rank classification Rank Q R hFE1 120 ~ 240 170 ~ 340 * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Marking symbol :1Z *2 Pulse measurement
0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Ta=25˚C IB=–8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 25˚C –75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 300 250 200 150 100 VCE =–2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 200 160 120 180 140 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 10 100 10003 30 300 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I E C ob —V CB