2SA1855 SANYO

Document overview

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Technical content

Features

  • Adoption of FBET and MBIT processes. - Large allowable collector dissipation. - Low saturation voltage. - Wide ASO and large current capacity. - Usage of radial taping to meet automatic mounting. ( ): 2SA1855 Absolute Maximum Ratings at Ta= 25°C unit Collector-toBase Voltage Vopo (-)60 Vv Collector-toEmitter Voltage Vcogo (-)50 v Emitter-toBase Voltage VeBo (-)6 Vv Collector Current Ic (-)4 A Collector Current (Pulse) Iop (-)6 A Collector Dissipation Po 15 #W Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Icso Vop=(—-)40V, In=0 (-)1 pA Emitter Cutoff Current lgBo Vep=(—)4V, Ic=0 (-)1 pA DC Current Gain hpp(1) Vor=(—)2V, I¢=(—)100mA 100 400% hg (2) Vor=(-)2V, Ic=(—)3A 40 Gain Bandwidth Product fy Vog=(—)10V, Io=(—)50mA 150 MHz Output Capacitance Con Vop=(—-)10V, f= 1MHz (39)25 pF Continued on next page. : The 25A1855/2SC4837 are classified by 100mA hg as follows :

100 R 200 140 S$ 280 200 T 400

Switching Time Test Circuit (unit : mm) 45 PW=20,8 ee we Des1% a Tes “1 7 ner Tee ourput 4 s ! Re _ 2 we 3 ‘ In ite ie eo sTHe o: | 100m | 470n eca VBE=-5V™ Vecg=25v Ic=10Igl=—101g2=1A Access (Caan Gi Gate Unit (Resistance : 2, Capacitance : F) | — “07 FLP init (Resistance : 2, Capacitance as - SANYO: FLP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 5132MH (KOTO) No.4135-1/4

Continued from preceding page. min typ max unit C-E Saturation Voltage Vewsat) Io=(—-)2A,Ip=(—)100mA (—350)(—700) mV > 190 500 mV B-E Saturation Voltage Vexeat) c= (—)2A, Ip=(—)100mA (-)0.94 (12 -V C-B Breakdown Voltage Visrcso |= Ig = — 104A, Ip =0 (—)60 v C-E Breakdown Voltage Veeryceo I¢=—1mA,Rpp=” (—)50 v E-B Breakdown Voltage Vipryeno p= —10eA,Io=0 (-)6 v Turn ON Time ton See specified Test Circuit. 70 ns Storage Time betg 4 (450)650 ns Fall Time ty Z (30)35 ns i ce Sc = TO EHH ee eer Heep eer] i Coaeereesr EER Cee ee H p+ Bete ed z Hs] Bot AZT | Monn [I So (4 E pe ona E ye SE 1 fees OE Cee Te ee 0 se a ee oe A TT Tt feo || Wt TT TT fio | ° 04 +08 “A? 6 +20 oO 04 Cx) 12 16 20 Collector to-Emitter Voltage, Veg — V Collector-to Emitter Voltage, Voz — V

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ae Oe GS a” S Drea) a 4] Single pulse ! CANE 02 SJ 4 For PNP, misius signiis omitted. [| TT] ° XN 10 10 100 oO 20 40 60 8 100120 “OQ 160 Collector-toEmitter Voltage, Vor - V Ambient Temperature, Ta - °C WM No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. MI Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and ail their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affilates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarcing its use or any infringements of intellectual property rights or other rights of third parties. ee No.4135-4/4