2SA1852 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Adoption of FBET process.
  • High fT : fT=300MHz(typ).
  • High breakdown voltage : VCEO =200V .
  • Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=1.5pF / NPN, 1.8pF / PNP.
  • Shipped in reel tape container to facilitate antomatic mounting. Specifications ( ) : 2SA1852 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)200 V Collector-to-Emitter Voltage V CEO (- -)200 V Emitter-to-Base Voltage V EBO (- -)3 V Collector Current I C (- -)100 mA Collector Current (Pulse) I CP (- -)200 mA Base Current I B (- -)20 mA Collector Dissipation P C 1.3 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)150V, IE=0 (- -)0.1 µA Emitter Cutoff Current I EBO VEB =(- -)2V, IC =0 (- -)1.0 µA Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Package Dimensions unit : mm 2084B [2SA1852 / 2SC4826]

60801 TS IM AX-9367

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 1 : Emitter 2 : Collector 3 : Base SANYO : FLP 10.5 1.2 1.6 0.5 2.5 2.5 4.5 1.2 1.4 2.6 8.5 1.0 7.5 1.9 0.5 123 2SA1852 / 2SC4826 High Definition CRT Display Video Output Applications PNP / NPN Epitaxial Planar Silicon Transistors

No.5495-2/4 48 1 6 12 20 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA ITR03940 IC -- VBE Collector Current, IC -- mA 2SC4826 V CE =10V 2SC4826 ITR03942 2SA1852 V CE = --10V --120 --100 --20 --40 --60 --80 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA ITR03941 --50 --40 --30 --20 --10 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA ITR03939 2SA1852 IB =0 --500µA --400µA --300µA --200µA --100µA --150µA --250µA --450µA --350µA IB =0 Base-to-Emitter V oltage, VBE -- V 2SC4826 V CE =10V hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE ITR03944 hFE -- IC DC Current Gain, hFE Collector Current, IC -- mA --1.0 100 23 557 --1072 2 35 --1007 2SA1852 V CE = --10V ITR03943 100 --50µA 500µA 400µA 300µA 200µA 100µA 150µA 250µA 450µA 350µA 50µA 120 100 1.0 23 557 1072 2 35 1007 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit DC Current Gain hFE 1V CE =(- -)10V, IC =(- -)10mA 60* 320* hFE 2V CE =(- -)10V, IC =(- -)50mA 20 Gain-Bandwidth Product f T VCE =(- -)30V, IC =(- -)30mA 300 MHz Output Capacitance Cob V CB =(- -)30V, f=1MHz (2.4)1.9 pF Reverse Transfer Capacitance Cre V CB =(- -)30V, f=1MHz (1.8)1.5 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)20mA, IB=(- -)2mA (- -)1.0 V Base-to-Emitter Saturation Voltage V BE (sat) I C =(- -)20mA, IB=(- -)2mA (- -)1.0 V * : The 2SA1852 / 2SC4826 are classified by 10mA hFE as follows : Rank D E F hFE 60 to 120 100 to 200 160 to 320

No.5495-3/4 ITR03952 2SC4826 IC / IB =10 2SC4826 f=1MHz 1.0 --1.0 --1023 5 7 23 5 757 --100 Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF ITR03947 2SA1852 f=1MHz --1.0 23 5 7 --10 --10023 5 757 --1.0 --0.1 ITR03951 2SA1852 IC / IB =10 100 1000 --1.0 325 7 --10 325 7 --100 fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz 2SA1852 V CE = --30V ITR03945 fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz 2SC4826 V CE =30V ITR03946 Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF ITR03948 2SC4826 f=1MHz Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF ITR03949 2SA1852 f=1MHz Cre -- VCB Collector-to-Base V oltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF ITR03950 100 1000 1.0 325 7 10 325 7 100 1.0 1.0 10 23 5 7 23 5 757 100 1.0 --1.0 --1023 5 7 23 5 757 --100 1.0 1.0 10 2 3 57 2 3 5757 100 1.0 23 5 7 10 100 23 5 757 1.0 0.1 Collector Current, IC -- mA VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- mA VCE (sat) -- IC Collector-to-Emitter Saturation V oltage, VCE (sat) -- V

No.5495-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice. PS Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C 1.6 1.2 1.3 0.8 0.4 2006 0 40 80 100 140 120 160 PC -- Ta ITR08230 A S O Collector Current, IC -- mA Collector-to-Emitter V oltage, VCE -- V 100 10 25 7735 100 23 ICP =200mA 10ms DC operation 1msIC =100mA ITR08229 Ta=25°C Single pulse For PNP, minus sign is omitted