2SA1832_15 KEXIN

Document overview

www.kexin.com.cn 1 Transistors PNP Transistors 2SA1832 ■ Features

High voltage and high current
Excellent hFE linearity
Complementary to 2SC4738 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -150 mA Collector Power Dissipation PC 100 mW Thermal Resistance Junction to Ambient RθJA 125 ℃/W Junction Temperature TJ 125 Storage Temperature range Tstg -65 to 125 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10mA -0.3 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA -1.2 DC current gain hFE VCE= -6V, IC= -2mA 70 400 Collector output capacitance Cob VCB= -10V, IE= 0mA,f=1MHz 4 7 pF Transition frequency fT VCE= -10V, IC= -1mA 80 MHz V V nA ■ Classification of hfe Type 2SA1832-O 2SA1832-Y 2SA1832-G Range 70-140 120-240 200-400 Marking SO SY SG -0.1 SOT-523 mm :tinU 0.2 +0.05 -0.05 1.0 +0.1 -0.1 1.6 +0.1 -0.1 1.6+0.15 -0.15 0.3±0.05 0.5+0.1 -0.1 0.75+0.05 -0.05 0.8±0.1 0.15±0.05 0.8+0.1 -0.1 0.36±0.1 0.55 (REF.)

www.kexin.com.cn2 Transistors PNP Transistors 2SA1832 ■ Typical Characterisitics