2SA1823 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • Adoption of MBIT process. + Low saturation voltage. - Fast switching speed + Large current capacity. Itis possible to make appliances more compact because it’s height on board is 9.5mm. - Meets radial taping. Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Vcso —25 v Collector-to-Emitter Voltage Voro 20 v Emitter-to-Base Voltage VEBo -5 Vv Collector Current Io -8 A Collector Current (Pulse) Iop -12 A Base Current. Ip -15 A Collector Dissipation Po 15° W Junction Temperature Tj 150 °C Storage Temperature Tstg —55to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current IcBo Vop= —20V, Ip=0 -l yA Emitter Cutoff Current Isso Vep= —4V,1c=0 -1 pA DC Current Gain hpg(1) = Veg=~—2V,I¢= —500mA 100* 400* bre) Vog=—2V,Ic=—6A 60 Gain-Bandwidth Product fp Vor= —2V,Io=—500mA 200 MHz Continued on next page. * : The 2SA1823 is classified by 500mA hryg as follows: 100, R_ 200|140 S 280 }200 T 400 Package Dimensions 2084 (unit : mm) _ 12 “| 9.5 0.5 He —e cs . Ulu DB: Base SANYO: FLP 2.5 2.5 TOKYO OFFICE. Tokyo Bldg., 1-10,1. Chome;: Ueno; Taito-ku, TOKYO,.110'JAPAN +: DO51MH, (KOTO) No.3870-1/3

2SA1823 . eee Continued from preceding page. : . min typ max — unit C-E Saturation Voltage Voxat) Ig= —5A, Ip= —250mA —220 -400 mV B-E Saturation Voltage VBE(sat) Ic=—5A, Ip= —250mA -1 -13 v Output Capacitance Cov Vop= —10V, f=1MHz 85 pF C-B Breakdown Voltage Vearcso Ic=—10zA, Ip=0 —25 v C-E Breakdown Voltage Visco c= —1mA, Rgp=° —20 v E-B Breakdown Voltage Vigryego Ie= —10A,Io=0 -5 Vv Turn-on Time ton See specified Test Circuit. 30 ns Storage Time tetg ” 200 ns Fall Time te ” 15 ns Switching ‘Time Test Circuit 5 “| PWe2Qus ca RL DC <1% iad 4 A b 100m | 47 | Vee=5¥ Voc -10¥ 201p1= —20)g2=Ig=—5A Unit (resistance: 9, capacitance: F) *°[—50mA YF . gL m0. Z << (fee res et ye Z 2 & Beer ml Fs LI ee Aa eee ey] ll oo Hi | ZoeeeeerneP ane Y] LL azo dT YT | i) 04 0.8 2 16 =20 0-02 O42 -06-08 10 12 34 -16 Collector-to-Emitter Voltage, Vog — V Base-toEmitter Voltage, Vaz — V =o ae See 1 a ES === = —e Pee Sse PRESS see ee a tris bof re ‘om co aan 4 foe pera tr) ei ee mak § Aes 3 ‘Ure TTS a SS 2S £ ae z See

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V TC Ta IN 2 NX a fet TIN TT] i Ne ie | ft wa 0 | [| N [J 20 40 60 80 100 20 140160 Ambient Temperature, Ta — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: vy pl yy @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTO, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information {including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees pl are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.3870-3/3