2SA1813_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SA1813 ■ Features
- High DC current gain (hFE=500 to 1200).
- Low collector-to-emitter saturation voltage
- High VEBO
1 Base
2 Emitter
3 Colletor
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 Emitter - Base Voltage VEBO -15 Collector Current - Continuous IC -150 Collector Current - Pulse ICM -300 Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -25 Emitter - base breakdown voltage VEBO IE= -100 uA， IC=0 -15 Collector-base cut-off current ICBO VCB= -20 V , IE=0 -100 Emitter cut-off current IEBO VEB= -10V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-1mA -0.15 -0.3 Base - emitter saturation voltage VBE(sat) IC=-50mA, IB=-1mA -0.78 -1.1 DC current gain hFE VCE= -5V, IC= -1mA 500 800 1200 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 2.6 pF Transition frequency fT VCE= -10V, IC= -10mA 210 MHz V V nA ■ Marking Marking KS
www.kexin.com.cn2 Transistors PNP Transistors 2SA1813 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1813 ■ Typical Characterisitics