2SA1812_15 KEXIN
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Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SA1812 ■ Features
- High breakdown voltage, BVCEO=-400V.
- High switching speed, typically tf :1us at IC =-100mA.
- High-voltage Switching Transistor 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -400 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -0.5 Collector Current - Pulse ICP -1 0.5 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Collector Power Dissipation PC W Note.1: When mounted on a 40X40X0.7mm ceramic board. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -400 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -400 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -400 V , IE=0 -10 Emitter cut-off current IEBO VEB= -6V , IC=0 -10 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10mA -1 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA -1.2 DC current gain hFE VCE= -5V, IC= -50mA 82 270 Turn-on time ton 0.6 Storage time tstg 2.7 Fall time tf 1 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 18 pF Transition frequency fT VCE= -5V, IE= 50mA,f=5MHz 12 MHz V V uA IC= -100mA, RL= 1.5kΩ IB1= -IB2=-10mA VCC= 0 to -150V uS ■ Marking Marking AJ*
www.kexin.com.cn2 Transistors PNP Transistors 2SA1812 ■ Typical Characterisitics 0 -10-6 -8-4 -0.1 -0.2 -0.3 -0.4 -0.5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : lC (A) Fig.1 Grouded emitter output characteristics -80mA-200mA -0005 -0.001 -0.002 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 COLLECTOR TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : lC (A) Fig.2 Grounded emitter propagation characteristics V CE =-5V 100 200 500 1000 COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE Fig.3 DC current gain vs. collector current ( ) Ta =25°C V CE =-10V -5V Ta =25°C lB = -20mA -40mA -60mA -100mA-120mA-140mA-160mA-180mA -25 Ta=100 COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V) Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current lC/lB=10 Ta =100 °C Ta = -25°C V CE(sat) V BE(sat) 100 200 500 1000 COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE Fig.4 DC current gain vs. collector current ( ) V CE =-5V Ta =100 °C 25°C -25°C -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Fig.5 Collector-emitter saturation voltage vs. collector current Ta =25°C l C/lB=50 25°C 25°C 100 °C -25°C -0.002 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : lC (A) Fig.9 Safe operating area (2SA1812) Ta=25°C (When mounted on a 40 40 0.7mm ceramic board.) Single nonrepetitive pulse PW=10ms 100ms lC Max. (Pulse ) 100 200 500 1000 COLLECTOR CURRENT : IE (A) TRANSITION FREQUENCY : fT (MHZ) Fig.7 TRANSITION FREQUENCY vs. EMITTER CURRENT Ta =25°C V CE =-5V 100 200 500 1000 COLLECTOR TO BASE VOLTAGE: VCB (V) COLLECTOR OUTPUT CAPACITANCE : COb (pF) Fig.8 Collector output capacitance vs. collector-base voltage Ta =25°C f=1MHZ lE =0A -0.02 -0.05 -0.1 -0.2 -0.5 -10
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1812 ■ Typical Characterisitics VIN PW PW_~50 s duty cycle<=1 lB1 lC RL=1.5k lB2 V CC_~-150V RG T.U.T +VBB IB IC ton tstg tf lc lB1 lB2 90% 10% 0.001 10001 10 1000.10.01 0.1 100 1000 10000 100000 PULSE WIDTH : PW (s) TRANSIENT THERMAL RESISTANCE : Rth (°C / W) Fig.10 TRANSIENT THERMAL RESISTANCE (2SA1812) (1) When mounted on a 40 40 0.7mm ceramic board (2) Unmounted (2) (1) Fig.11 Switching characteristic measurement circuit