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ANG ELECTRONICS TECHNOLOGY CO., LTD SOT -89-3L Plastic-Encapsulate Transistors 2SA1797 TRANSIST OR (PNP)
FEATURES
z Excellent DC current gain characteristics z Complements to 2SC4672 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Symbol Para meter V alue Unit VCBO Coll ector-Base Voltage -50 V VCE O Coll ector-Emitter Voltage -50 V VEB O Emitter-Base V oltage -6 V IC Continuous Coll ector Current -2 A PC Coll ector Power dissipation 500 mW TJ Junctio n Temperature 150 ℃ Tst g S torage Temperature -55~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO IC=-5 0μA, IE=0 -50 V Co llector-emitter breakdown voltage V(B R)CEO IC=-1 mA, IB= 0 -50 V Emitter-b ase breakdown voltage V( BR)EBO IE=-5 0μA, IC=0 -6 V Co llector cut-off current ICB O V CB= -50V, IE=0 -0.1 μA Emitter cut-off current IEBO V EB=-5 V, IC=0 -0.1 μA DC cu rrent gain hFE V CE=-2 V, IC= -500mA 82 Co llector-emitter saturation voltage VCE (sat) I C=-1 A, IB= -50mA -0.35 V T ransition frequency fT V CE=-2 V, IC= -0.5A, f=100MHz 200 MHz Co llector output capacitance Cob V CB= -10V, IE= 0, f=1MHz 36 pF SOT -89-3L 1. BASE COL LECTOR EMITTER ICM Peak Pluse Curr ent -3 A CLASSIFICA TION of hFE Rank P Q R Ra nge 82-180 120-270 180-390 Ma rking AGP AGQ AGR www.cj-elec.com 1 E,Nov,2015www.cj-elec.com
-1 -10 100 1000 -1 -10 100 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -0.1 -10 -100 -1000 -0 -2 -4 -6 -8 -10 -0.0 -0.5 -1.0 -1.5 -2.0 -1 -10 -100 -1000 100 1000 -1 -10 -100 -1000 -0.1 f=1MHz I E =0 / I C T a =25 o C -20 C ob C ib V CB / V EB C ob / C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COMMON EMITTER V CE =-2V T a =25 I C f T 200 -70 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) P c —— T a COLLECTOR POWER DISSIPATION P c (W) AMBIENT TEMPERATURE T a ( ) -2000 T a =100 o C T a =25 o C -2000 β=20 V CEsat —— I C COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =-2V T a =25 o C T a =100 o C V BE —— I C COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) COMMON EMITTER T a =25 I B =-1mA COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic -10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA COMMON EMITTER V CE = -2V T a =25 o C T a =100 o C I C h FE DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -2000 T a =100 o C T a =25 o C β=20 I C V BEsat BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) -2000 Typical Characteristics www.cj-elec.com 2 E,Nov,2015www.cj-elec.com
A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 3 E,Nov,2015www.cj-elec.com
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