2SA1797 DGNJDZ

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

FEATURES

z Low saturation voltage V CE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A). z Excellent DC current gain characteristics. z Complements the 2SA1797 and 2SC4672.

APPLICATIONS

z Low frequency transistor. SOT-89

ORDERING INFORMATION

Type No. Marking Package Code 2SA1797 AGP/AGQ SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC C o l l e c t o r C u r r e n t D C P u l s e A PC Collector Dissipation 500 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ DONGGUAN NANJING ELECTRONICS LTD., PNP Silicon Epitaxial Planar Transistor www.dgnjdz.comwww.dgnjdz.com All data s heet.com

PNP Silicon Epitaxial Planar Transistor 2SA1797 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO I C=-1.0mA,IB=0 -50 V Emitter-base breakdown voltage V (BR)EBO I E=-50μA,IC=0 -6 V Collector cut-off current ICBO VCB=-50V,IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA 82 180 DC current gain hFE V CE=-2V,IC=-500mA 120 270 Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA -0.15 -0.35 V Transition frequency fT VCE=-2V, IE=-500mA f=100MHz 200 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 36 pF CLASSIFICATION OF h FE Rank P Q Range 82-180 120-270 Marking AGP AGQ TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.dgnjdz.comwww.dgnjdz.com All data s heet.com

PNP Silicon Epitaxial Planar Transistor 2SA1797 www.dgnjdz.comwww.dgnjdz.com All data s heet.com

PNP Silicon Epitaxial Planar Transistor 2SA1797 www.dgnjdz.comwww.dgnjdz.com All data s heet.com