2SA1797 HOTTECH

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Page:P2-P1 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES

  • Low saturation voltage
  • Excellent DC current gain characteristics
  • Complements to 2SC4672 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-BaseV oltage V CBO -50 V Collector-EmitterV oltage V CEO -50 V Emitter-Base V oltage V EBO -6 V CollectorCurrent-Continuous IC -2 A CollectorPower dissipation PC 0.5 W JunctionTempe rature TJ 150 StorageTemp erature Tstg -55to +150 ELECTRICAL CHARACTERISTICS (@ Ta=25 unless otherwise specified) Parameter Symbol Test conditions M in Typ M ax U nit Collector-basebreakdow n voltage V CBO IC =-50μA, IE=0 -50 V Collector-emitter breakdow n voltage V CEO IC =-1mA, IB =0 -50 V Emitter-base breakdow n voltage V EBO IE=-50μA, IC =0 -6 V Collector cut-off current ICBO V CB =-50V , IE=0 -0.1 μ A Emittercut-offcurrent IEBO V EB =-5V ,IC =0 -0.1 μ A DC current gain hFE V CE =-2V ,IC =-500mA 82 270 Collector-emitter saturationvoltage V CE(sat) IC =-1A, IB =-50mA -0.35 V Transition frequency fT V CE =-2V ,IC =-0.5A, f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V , IE=0, f=1MHz 36 pF CLASSIFICATION OF h FE Rank P Q Range 80-180 120-270 Marking AGP A GQ 2SA1797 (PNP ) 1. BASE 2.COLLECTO SOT -89 3.EMITTER

Page:P2-P2 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics2SA1797