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Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Page:P2-P1 Plastic-Encapsulate Transistors

FEATURES

  • Low saturation voltage
  • Excellent DC current gain characteristics
  • Complements to 2SC4672 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base Voltage V CBO -50 V Collector-Emitter Voltage V CEO -50 V Emitter-Base Voltage V EBO -6 V Collector Current -Continuous IC -2 A Collector Power dissipation PC 0.5 W Junction Temperature TJ 150 Storage Temperature Tstg -55to +150 ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V CBO IC =-50μA, IE=0 -50 V Collector-emitter breakdown voltage V CEO IC =-1mA, IB =0 -50 V Emitter-base breakdown voltage V EBO IE=-50μA, IC =0 -6 V Collector cut-off current ICBO V CB =-50V, IE=0 -0.1 μA Emitter cut-off current IEBO V EB =-5V, IC =0 -0.1 μA DC current gain hFE V CE =-2V, IC =-500mA 82 270 Collector-emitter saturation voltage V CE(sat) IC =-1A, IB =-50mA -0.35 V Transition frequency fT V CE =-2V, IC =-0.5A, f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, IE=0, f=1MHz 36 pF CLASSIFICATION OF h FE Rank P Q Range 80-180 120-270 Marking AGP AGQ 2SA1797 (PNP) 1. BASE 2. COLLECTO SOT-89 3. EMITTER MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

Page:P2-P2 Plastic-Encapsulate Transistors Typical Characteristics2SA1797 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/