Download PDFDATASHEET SEARCH SITE
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP)
FEATURES
Excellent DC current gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -2 A PC Collector Power dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB V 0 5 - 0 = Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -6 V Collector cut-off current ICBO V CB=-50V, IE 1 . 0 - 0 = µA Emitter cut-off current IEBO V EB=-5V, IC 1 . 0 - 0 = µA DC current gain hFE V CE=-2V, IC=-500mA 82 270 Collector-emitter saturation voltage VCE(sat) I C=-1A, IB V 5 3 . 0 - A m 0 5 - = Transition frequency fT V CE=-2V, IC=-0.5A, f=100MHz 200 MHz Collector output capacitance Cob V CB=-10V, IE=0, f=1MHz 36 pF CLASSIFICATION OF h FE Rank Q P Range 0 7 2 - 0 2 1 0 8 1 - 2 8 Q G A P G A g n i k r a M SOT-89 1. BASE 2. COLLECTOR 3. EMITTER WILLAS WILLAS ELECTRONIC CORP.2012-10 2SA1797
WILLAS ELECTRONIC CORP.2012-10 -1 -10 100 1000 -0.1 -10 -100 -1000 -0 -2 -4 -6 -8 -10 -0.0 -0.5 -1.0 -1.5 -2.0 -1 -10 -100 -1000 100 1000 -1 -10 -100 -1000 -0.1 f=1MHz IE=0 / IC=0 Ta=25 o C -20 Cob Cib VCB / VEBCob / Cib —— CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COMMON EMITTER V CE=-2V Ta=25℃ ICfT —— -70 TRANSITION F COLLECTOR CURRENT IC (mA) Pc —— Ta COLLECTO AMBIENT TEMPERATURE Ta ( )℃ -2000 Ta=100 o C Ta=25 o C -2000 β=20 VCEsat —— IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER V CE=-2V Ta=25 o C Ta=100 o C VBE —— I C COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE(V) COMMON EMITTER T a=25℃ IB=-1mA COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Static Characteristic -10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA COMMON EMITTER V CE= -2V Ta=25 o C Ta=100 o C IChFE —— DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -2000 Ta=100 o C Ta=25 o C β=20 ICVBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) -2000 SOT-89 Plastic-Encapsulate Transistors WILLAS 2SA1797
WILLAS ELECTRONIC CORP.2012-10 -1 -10 100 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 COMMON EMITTER VCE=-2V Ta=25℃ ICfT —— 200 -70 TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) Pc —— Ta COLLECTOR POWER DISSIPATION Pc (W) AMBIENT TEMPERATURE Ta ( )℃ SOT-89 Plastic-Encapsulate Transistors WILLAS 2SA1797
Dimensions in inches and (millimeters) SOT-89 Rev.C .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061REF (1.55)REF .023(0.58) .016(0.40) .060TYP (1.50)TYP .118TYP (3.0)TYP .197(0.52) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) WILLAS ELECTRONIC CORP.2012-10 SOT-89 Plastic-Encapsulate Transistors WILLAS 2SA1797