2SA1797 SECOS

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

General Purpose Transistor 01-June-2005 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1. Base 2. Collector 3. Emitter RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

 High transition frequency  High power dissipation PACKAGE DIMENSIONS MARKING : AGX X = hFE Rank Code ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector-Base Voltage V CBO -50 V Collector-Emitter Voltage V CEO -50 V Emitter-Base Voltage V EBO -6 V Collector Current -Continuous I C -2 A Collector Dissipation P C 0.5 W Junction & Storage temperature T J, TSTG 150, -55~150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V (BR)CBO -50 - V I C=-50μA, IE=0 Collector-emitter breakdown voltage V (BR)CEO -50 - V I C= -1mA, IB=0 Emitter-base breakdown voltage V (BR)EBO -6 - V I E=-50μA, IC=0 Collector cut-off current I CBO - -0.1 μA V CB=-50V, IE=0 Emitter cut-off current I EBO - -0.1 μA V EB=-5 V, IC=0 DC current gain h FE 82 270 V CE=-2V, IC= -500mA Collector-emitter saturation voltage V CE(sat) - -0.35 V I C=-1A, IB= -50mA Typical Transition frequency f T - 200 - MHz V CE=-2V, IC=-500mA, f = 100MHz Output Capacitance C OB 36 pF V CB=-10V, IE=0, f=1MHz CLASSIFICATION OF hFE2 Rank P Q Range 82 - 180 120 - 270 A 4.40 4.60 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 ° TYP . M0 . 7 0 R E F . SOT-89 G L J K H I A MEF B C D

General Purpose Transistor 01-June-2005 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES